2019 and Earlier
| 2024 |
2023 |
2022 |
2021 |
2020 |
2019 and Earlier |
2019 and Earlier
2019
244 Pomerantz, N. L.; Anderson, E. E.; Dugan, N. P.; Hoffman, N. F.; Barton, H. F.; Lee, D. T.; Oldham, C. J.; Peterson, G. W.; Parsons, G. N. Air, Water Vapor, and Aerosol Transport through Textiles with Surface Functional Coatings of Metal Oxides and Metal-Organic Frameworks. ACS Appl Mater Interfaces, 2019, 11 (27), 24683-24690 DOI: 10.1021/acsami.9b04091
243 Song, S. K.; Saare, H.; Parsons, G. N. Integrated Isothermal Atomic Layer Deposition/Atomic Layer Etching Supercycles for Area Selective Deposition of TiO2. Chem. Mater., 2019, 31 (13), 4793-4804 DOI: 10.1021/acs.chemmater.9b01143
242 Hill, G. T.; Lee, D. T.; Williams, P. S.; Needham, C. D.; Dandley, E. C.; Oldham, C. J.; Parsons, G. N. Insight on the Sequential Vapor Infiltration Mechanisms of Trimethylaluminum with Poly(methyl methacrylate), Poly(vinylpyrrolidone), and Poly(acrylic acid). J. Phys. Chem. C, 2019, 123 (26), 16146-16152 DOI: 10.1021/acs.jpcc.9b02153
241 Lee, D.; Jamir, J.; Peterson, G.; Parsons, G. N. Water-Stable Chemical-Protective Textiles via Euhedral Surface-Oriented 2D Cu TCPP Metal-Organic Frameworks. Small, 2019, 15 (10), DOI: 10.1002/smll.201805133
240 Parsons, G. N. Functional model for analysis of ALD nucleation and quantification of area-selective deposition. J. Vac. Sci. Technol. A, 2019, 37 (2), DOI: 10.1116/1.5054285
239 Fusco, M. A.; Oldham, C. J.; Parsons, G. N. Investigation of the Corrosion Behavior of Atomic Layer Deposited Al2O3/TiO2 Nanolaminate Thin Films on Copper in 0.1 M NaCl. Materials,
2019, 12 (4), DOI: 10.3390/ma12040672
2018
238 Stevens, E. C.; Mousa, M. B. M.; Parsons, G. N. Thermal atomic layer deposition of Sn metal using SnCl4 and a vapor phase silyl dihydropyrazine reducing agent. J. Vac. Sci. Technol. A, 2018, 36 (6), DOI: 10.1116/1.5055212
237 Min, J. H.; Chen, Y. A.; Chen, I.T.; Sun, T. L.; Lee, D. T.; Li, C. J.; Zhu, Y.; O’Connor, B. T.; Parsons, G. N.; Chang, C. H. Conformal Physical Vapor Deposition Assisted by Atomic Layer Deposition and Its Application for Stretchable Conductors. Adv. Mater. Interfaces, 2018, 5 (22), DOI: 10.1002/admi.201801379
236 Xie, W.; Khan, S.; Rojas, O.; Parsons, G. N. Control of Micro- and Mesopores in Carbon Nanofibers and Hollow Carbon Nanofibers Derived from Cellulose Diacetate via Vapor Phase Infiltration of Diethyl Zinc. ACS Sustain. Chem. Eng., 2018, 6 (11), 13844-13853 DOI: 10.1021/acssuschemeng.8b02014
235 King, M. X.; Theofanis, P.; Lemaire, P. C.; Santiso, E.; Parsons, G. N. Ab initio Analysis of Nucleation Reactions during Tungsten Atomic Layer Deposition on Si(100) and W(110) Substrates. J. Vac. Sci. Technol. A, 2018, 36 (6), DOI: 10.1116/1.5044740
234 Cui, K.; Lemaire, P. C.; Zhao, H.; Savas, T.; Parsons, G. N.; Hart, A.J. Tungsten-Carbon Nanotube Composite Photonic Crystals as Thermally Stable Spectral-Selective Absorbers and Emitters for Thermophotovoltaics. Adv. Energy Mater., 2018, 8 (27), DOI: 10.1002/aenm.201801471
233 Barton, H. F.; Davis, A. K.; Lee, D. T..; Parsons, G. N. Solvothermal Synthesis of MIL-96 and UiO-66-NH 2 on Atomic Layer Deposited Metal Oxide Coatings on Fiber Mats. J. Vis. Exp., 2018, 136, DOI: 10.3791/57734
232 Dwyer, D.; Lee, D.; Boyer, S.; Bernier, Wi.; Parsons, G. N.; Jones, W. Toxic Organophosphate Hydrolysis using Nanofiber Templated UiO-66-NH2 Metal-Organic Framework Polycrystalline Cylinders. ACS Appl. Mater. Interfaces, 2018, 10 (30), 25794-25803 DOI: 10.1021/acsami.8b08167
231 Stevens, E.; Tomczak, Y.; Chan, B. T.; Sanchez, E. A.; Parsons, G. N.; Delabie, A. Area-Selective Atomic Layer Deposition of TiN, TiO2, and HfO2 on Silicon Nitride with inhibition on Amorphous Carbon. Chem. Mater., 2018, 30 (10), 3223-3232 DOI:
10.1021/acs.chemmater.8b00017
230 Mousa, M. B. M.; Ovental, J. S.; Brozena, A. H.; Oldham, Khan, S. A.; C. J.; Parsons, G. N. Modeling and Experimental Demonstration of High-Throughput Flow-Through Spatial Atomic Layer Deposition of Al2O3 Coatings on Textiles at Atmospheric Pressure. J. Vac. Sci. Technol. A, 2018, 36 (3), DOI: 10.1116/1.5022077
229 Xie, W., Lemaire, P. C. and Parsons, G. N. Thermally Driven Self Limiting Atomic Layer Etching of Metallic Tungsten Using WF 6 and O 2 . ACS Appl. Mater. Interfaces, 2018, 10 (10), 9147-9154 DOI: 10.1021/acsami.7b19024
228 Tripathi, A.; Parsons, G. N.; Khan, S. A.; Rojas, O. J. Synthesis of organic aerogels with tailorable morphology and strength by controlled solvent swelling following Hansen solubility. Sci. Rep., 2018, 8, DOI: 10.1038/s41598-018-19720-4
227 Ives, R. L.; Oldham, C. J.; Daubert, J. S.; Gremaud, A. P.; Collins, G.; Marsden, D.; Bui, T.; Fusco, M. A.; Mitsdarffer, B.; Parsons, G. Corrosion Mitigation Coatings for RF Sources and Components. IEEE Trans. Electron Devices, 2018, 65 (6), 2385-2392 DOI: 10.1109/TED.2017.2788379
2017
226 Lee, D. T.; Zhao, J.; Oldham, C. J.; Peterson, G. W.; Parsons, G. N. UiO-66-NH 2 Metal–Organic Framework (MOF) Nucleation on TiO2, ZnO, and Al 2 O 3 Atomic Layer Deposition-TreatedPolymer Fibers: Role of Metal Oxide on MOF Growth and Catalytic Hydrolysis of Chemical Warfare Agent Simulants. ACS Appl. Mater. Interfaces, 2017, 9 (51), 44847-44855 DOI: 10.1021/acsami.7b15397.
225 Zhao, J.; Kalanyan, B.; Barton, H. F.; Sperling, B. A.; Parsons, G. N. In Situ Time-Resolved Attenuated Total Reflectance Infrared Spectroscopy for Probing Metal–Organic Framework Thin Film Growth. Chem. Mater., 2017, 29 (20), 8804-8810 DOI: 10.1021/acs.chemmater.7b03096.
224 Lemaire, P. C.; Parsons, G. N. Thermal Selective Vapor Etching of TiO2: Chemical Vapor Etching via WF6 and Self-Limiting Atomic Layer Etching Using WF6 and BCl3. Chem. Mater., 2017, 29 (16), 6653–6665 DOI: 10.1021/acs.chemmater.7b00985.
223 Bagal, A.; Zhang, X. A.; Shahrin, R.; Dandley, E. C.; Zhao, J.; Poblete, F. R.; Oldham, C. J.; Zhu, Y.; Parsons, G. N.; Bobko, C.; Chang, C.-H. Large-Area Nanolattice Film with Enhanced Modulus, Hardness, and Energy Dissipation. Sci. Rep., 2017, 7 (1) DOI: 10.1038/s41598-017-09521-6.
222 Tripathi, A.; Parsons, G. N.; Rojas, O. J.; Khan, S. A. Featherlight, Mechanically Robust Cellulose Ester Aerogels for Environmental Remediation. ACS Omega, 2017, 2 (8), 4297–4305 DOI: 10.1021/acsomega.7b00571.
221 Duke, K. S.; Taylor-Just, A. J.; Ihrie, M. D.; Shipkowski, K. A.; Thompson, E. A.; Dandley, E. C.; Parsons, G. N.; Bonner, J. C. STAT1 Dependent and -Independent Pulmonary Allergic and Fibrogenic Responses in Mice after Exposure to Tangled versus Rod-like Multi- Walled Carbon Nanotubes. Part. Fibre Toxicol., 2017, 14 (1) DOI: 10.1186/s12989-017-0207-3.
220 Daubert, J. S.; Wang, R.; Ovental, J. S.; Barton, H. F.; Rajagopalan, R.; Augustyn, V.; Parsons, G. N. Intrinsic Limitations of Atomic Layer Deposition for Pseudocapacitive Metal Oxides in Porous Electrochemical Capacitor Electrodes. J. Mater. Chem. A, 2017, 0 (25), 1–12 DOI: 10.1039/C7TA02719B.
219 Lemaire, P. C.; Lee, D. T.; Zhao, J.; Parsons, G. N. Reversible Low-Temperature Metal Node Distortion during Atomic Layer Deposition of Al2O3 and TiO2 on UiO-66-NH2 Metal Organic Framework Crystal Surfaces. ACS Appl. Mater. Interfaces, 2017, 9 (26), 22042-22054 DOI: 10.1021/acsami.7b05214.
218 Lee, D. T.; Zhao, J.; Peterson, G. W.; Parsons, G. N. Catalytic “MOF-Cloth” Formed via Directed Supramolecular Assembly of UiO 66-NH2 Crystals on Atomic Layer Deposition-Coated Textiles for Rapid Degradation of Chemical Warfare Agent Simulants. Chem. Mater., 2017, 29 (11), 4894–4903 DOI: 10.1021/acs.chemmater.7b00949.
217 Hilton, G. M.; Taylor, A. J.; Hussain, S.; Dandley, E. C.; Griffith, E. H.; Garantziotis, S.; Parsons, G. N.; Bonner, J. C.; Bereman, M. S. Mapping Differential Cellular Protein Response of Mouse Alveolar Epithelial Cells to Multi-Walled Carbon Nanotubes as a Function of Atomic Layer Deposition Coating. Nanotoxicology, 2017, 11 (3), 313 326 DOI: 10.1080/17435390.2017.1299888.
216 Daubert, J. S.; Hill, G. T.; Gotsch, H. N.; Gremaud, A. P.; Ovental, J. S.; Williams, P. S.; Oldham, C. J.; Parsons, G. N. Corrosion Protection of Copper Using Al2O3, TiO2, ZnO, HfO2, and ZrO2 Atomic Layer Deposition. ACS Appl. Mater. Interfaces, 2017, 9 (4), 4192–4201 DOI: 10.1021/acsami.6b13571.
215 Lemaire, P. C.; King, M.; Parsons, G. N. Understanding Inherent Substrate Selectivity during Atomic Layer Deposition: Effect of Surface Preparation, Hydroxyl Density, and Metal Oxide Composition on Nucleation Mechanisms during Tungsten ALD. J. Chem. Phys., 2017, 146 (5) DOI: 10.1063/1.4967811
2016
214 Daubert, J. S.; Mundy, J. Z.; Parsons, G. N. Kevlar-Based Supercapacitor Fibers with Conformal Pseudocapacitive Metal Oxide and Metal Formed by ALD. Adv. Mater. Interfaces, 2016, 3 (21), DOI: 10.1002/admi.201600355
213 Kim, D. H.; Losego, M. D.; Peng, Q.; Parsons, G. N. Thin Films: Atomic Layer Deposition for Sensitized Solar Cells: Recent Progress and Prospects, Adv. Mater. Interfaces, 2016 3 (21) DOI: 10.1002/admi.201670102
212 Zhao, J.; Lee, D. T.; Yaga, R. W.; Hall, M. G.; Barton, H. F.; Woodward, I. R.; Oldham, C. J.; Walls, H. J; Peterson, G. W.; Parsons, G. N. Ultra-Fast Degradation of Chemical Warfare Agents Using MOF Nanofiber Kebabs, Angew. Chem., 2016, 55 (42), pp 13224 13228 DOI: 10.1002/anie.201606656
211 Tovar, T. M.; Zhao, J. J.; Nunn, W. T.; Barton, H. F.; Peterson, G. W.; Parsons, G. N.; Levan, M. D. Diffusion of CO2 in Large Crystals of Cu-BTC MOF, J. Am. Chem. Soc., 2016, 138 (36), pp 11449-11452 DOI: 10.1021/jacs.6b05930
210 Wang, Z. T.; Zhao, J. J.; Bagal, A.; Dandley, E. C.; Oldham, C. J.; Fang, T. G.; Parsons, G. N.; Chang, C. H.; Wicking Enhancement in Three-Dimensional Hierarchical Nanostructures, Langmuir, 2016, 32, 8029-8033 DOI: 10.1021/acs.langmuir.6b01864
209 Huang, L. J.; Li, G. Q.; Gurarslan, A.; Yu, Y. L.; Kirste, R.; Guo, W.; Zhao, J. J.; Collazo, R.; Sitar, Z.; Parsons, G. N.; Kudenov, M.; Cao, L. Y. Atomically Thin MoS2 Narrowband and Broadband Light Superabsorbers, ACS Nano, 2016, 10 (8), 7493-7499 DOI: 10.1021/acsnano.6b02195
208 Dandley, E. C.; Taylor, A. J.; Duke, K. S.; Ihrie, M. D.; Shipkowski, K. A.; Parsons, G. N.; Bonner, J. C. Atomic layer deposition coating of carbon nanotubes with zinc oxide causes acute phase immune responses in human monocytes in vitro and in mice after pulmonary exposure, Part. Fibre. Toxicol., 2016, 13 (29), DOI: 10.1186/s12989-016-0141-9
207 Lemaire, P. C.; Zhao, J.; Williams, P. S.; Walls, H. J.; Shepherd, S. D.; Losego, M. D.; Peterson, G. W.; Parsons, G. N. Copper Benzenetricarboxylate Metal–Organic Framework Nucleation Mechanisms on Metal Oxide Powders and Thin Films formed by Atomic Layer Deposition, ACS Appl. Mater. Interfaces, 2016, 8 (14), 9514-9522 DOI: 10.1021/acsami.6b01195
206 Dandley, Erinn C.; Lemaire, Paul C.; Zhu, Zhongwei; Yoon, Alex; Sheet, Lubab; Parsons, Gregory N., Wafer-Scale Selective-Area Deposition of Nanoscale Metal Oxide Features Using Vapor Saturation into Patterned Poly(methyl methacrylate) Templates, Adv. Mater. Interfaces, 2016, 3 (2) 1500431 DOI: 10.1002/admi.201500431
205 Kalanyan, B.; Lemaire, P. C.; Atanasov, S. E.; Ritz, M. J.; Parsons, G. N., Using Hydrogen to Expand the Inherent Substrate Selectivity Window During Tungsten Atomic Layer Deposition, Chem. Mater., 2016, 28 (1), 117-126 DOI: 10.1021/acs.chemmater.5b03319
204 Atanasov, S. A.; Kalanyan, B.; Parsons, G. N. Inherent substrate-dependent growth initiation and selective-area atomic layer deposition of TiO2 using “water-free” metal-halide/metal alkoxide reactants. J. Vac. Sci. Technol. A, 2016, 34: 01A148 (special issue on ALD) DOI: 10.1116/1.493848
203 Brozena, A. H.; Oldham, C. J.; Parsons, G. N., Atomic Layer Deposition on Polymer Fibers and Fabrics for Multifunctional and Electronic Textiles, J. Vac. Sci. Technol. A, 2016, 34: 010801 (special issue on ALD) DOI:10.1116/1.4938104
202 Lemaire, P. C.; Oldham, C. J.; Parsons, G. N., Rapid Visible Color Change and Physical Swelling During Water Exposure in Triethanolamine-Metalcone Films Formed by Molecular Layer Deposition, J. Vac. Sci. Technol. A, 2016, 34: 01A134 (special issue on ALD) DOI: 10.1116/1.4937222
201 Mundy, J. Z.; Shafiefarhood, A.; Li, F.; Khan, S.A.; and Parsons, G. N., Low temperature Pt-ALD on nylon-6 for highly conductive and catalytic fiber mats. J. Vac. Sci. Technol. A, 2016, 34: 01A152 (special issue on ALD) DOI:10.1116/1.4935448
200 Min J-H.; Bagal A.; Mundy J. Z.; Oldham C. J.; Wu B-I.; Parsons G. N.; Chang C-H.; “Fabrication and Design of Metal Nano-Accordion Structures Using Atomic Layer Deposition and Interference Lithography”, Nanoscale, 2016, 8 (9), 4984-4990 DOI: 10.1039/C5NR08566G
2015
199 Knauf, R. R.; Kalanyan, B.; Parsons, G. N.; Dempsey, J. L., Charge Recombination Dynamics in Sensitized SnO2/TiO2 Core/Shell Photoanodes, J. Phys. Chem. C, 2015, 119 (51), 28353–28360 DOI: 10.1021/acs.jpcc.5b10574
198 Vogel, N. A.; Williams, P. S.; Brozena, A. H.; Sen, D.; Atanasov, S.; Parsons, G. N.; Khan, S. A. Delayed Dissolution and Small Molecule Release from Atomic Layer Deposition Coated Electrospun Nanofibers, Adv. Mater. Interfaces, 2015, 2: 1500229 DOI: 10.1002/admi.201500229
197 Zhang, X. A.; Bagal, A.; Dandley, E. C.; Zhao, J.; Oldham, C. J.; Wu, B.-I.; Parsons, G. N.; Chang, C.-H. Ordered 3D Thin-Shell Nanolattice Materials with Near-Unity Refractive Indices. Adv. Funct. Mater., 2015, 25 (42), 6644-6649 DOI: 10.1002/adfm.201502854.
196 Zhao, J., W.T. Nunn, P.C. Lemaire, Y. Lin, M.D. Dickey, C.J. Oldham, H.J. Walls, G.W. Peterson, M.D. Losego, G.N. Parsons “Facile Conversion of Hydroxy Double Salts to Metal−Organic Frameworks Using Metal Oxide Particles and Atomic Layer Deposition Thin-Film Templates”, J. Am. Chem. Soc., 2015, 137, 13756–13759 DOI: 10.1021/jacs.5b08752178.
195 Daubert, J. S.; Lewis, N. P.; Gotsch, H. N.; Mundy, J. Z.; Monroe, D. N.; Dickey, E. C.; Losego, M. D.; Parsons, G. N. Effect of Meso- and Micro-Porosity in Carbon Electrodes on Atomic Layer Deposition of Pseudocapacitive V2O5 for High Performance Supercapacitors. Chem. Mat., 2015, 27 (19), 6524–6534 DOI: 10.1021/acs.chemmater.5b01602.
194 Mousa, M. B. M.; Oldham, C. J.; Parsons, G. N. Precise Nanoscale Surface Modification and Coating of Macroscale Objects: Open-Environment in Loco Atomic Layer Deposition on an Automobile. ACS Appl. Mater. Interfaces, 2015, 7 (35), 19523–19529 DOI: 10.1021/acsami.5b05262.
193 Bagal, A.; Dandley, E. C.; Zhao, J.; Zhang, X. A.; Oldham, C. J.; Parsons, G. N.; Chang, C.-H. Multifunctional nano-accordion structures for stretchable transparent conductors. Mater. Horizons, 2015, 2 (5), 486–494 DOI: 10.1039/c5mh00070j.
192 Sweet, W. J.; Parsons, G. N. In Situ Conductance Analysis of Zinc Oxide Nucleation and Coalescence during Atomic Layer Deposition on Metal Oxides and Polymers. Langmuir, 2015, 31 (26), 7274–7282 DOI: 10.1021/acs.langmuir.5b00665.
191 Hilton, G. M.; Taylor, A. J.; McClure, C. D.; Parsons, G. N.; Bonner, J. C.; Bereman, M. S. Toxicoproteomic analysis of pulmonary carbon nanotube exposure using LC-MS/MS. Toxicology, 2015, 329, 80–87 DOI: 10.1016/j.tox.2015.01.011..
190 Kim, D. H.; Atanasov, S. E.; Lemaire, P.; Lee, K.; Parsons, G. N. Platinum-Free Cathode for Dye-Sensitized Solar Cells Using Poly(3,4 -ethylenedioxythiophene) (PEDOT) Formed via Oxidative Molecular Layer Deposition. ACS Appl. Mater. Interfaces, 2015, 7 (7), 3866–3870 DOI: 10.1021/am5084418.
189 Yang, C. S.; Smith, L. L.; Arthur, C. B.; Parsons, G. N. Stability of low-temperature amorphous silicon thin film transistors formed on glass and transparent plastic substrates. J. Vac. Sci. Technol. B 2000, 18 (2), 683–689 DOI: 10.1116/1.591259.
188 Sweet, W. J.; Oldham, C. J.; Parsons, G. N. Conductivity and touch-sensor application for atomic layer deposition ZnO and Al:ZnO on nylon nonwoven fiber mats. J. Vac. Sci. Technol. A, 2015, 33 (1), 01A117 DOI: 10.1116/1.4900718.
187 Zhao, J.; Gong, B.; Nunn, W. T.; Lemaire, P. C.; Stevens, E. C.; Sidi, F. I.; Williams, P. S.; Oldham, C. J.; Walls, H. J.; Shepherd, S. D.; Browe, M. A.; Peterson, G. W.; Losego, M. D.; Parsons, G. N. Conformal and highly adsorptive metal-organic framework thin films via layer by-layer growth on ALD-coated fiber mats. J. Mater. Chem. A, 2015, 3 (4), 1458–1464 DOI: 10.1039/c4ta05501b.
2014
186 Taylor, A. J.; McClure, C. D.; Shipkowski, K. A.; Thompson, E. A.; Hussain, S.; Garantziotis, S.; Parsons, G. N.; Bonner, J. C. Atomic Layer Deposition Coating of Carbon Nanotubes with Aluminum Oxide Alters Pro-Fibrogenic Cytokine Expression by Human Mononuclear Phagocytes In Vitro and Reduces Lung Fibrosis in Mice In Vivo. PLoS One, 2014, 9 (9), e106870 DOI: 10.1371/journal.pone.0106870.
185 Sweet, W. J.; Oldham, C. J.; Parsons, G. N. Atomic Layer Deposition of Metal Oxide Patterns on Nonwoven Fiber Mats using Localized Physical Compression. ACS Appl. Mater. Interfaces, 2014, 6 (12), 9280–9289 DOI: 10.1021/am501582p.
184 Song, W.; Vannucci, A. K.; Farnum, B. H.; Lapides, A. M.; Brennaman, M. K.; Kalanyan, B.; Alibabaei, L.; Concepcion, J. J.; Losego, M. D.; Parsons, G. N.; Meyer, T. J. Visible Light Driven Benzyl Alcohol Dehydrogenation in a Dye-Sensitized Photoelectrosynthesis Cell. J. Am. Chem. Soc., 2014, 136 (27), 9773–9779 DOI: 10.1021/ja505022f.
183 Mousa, M. B. M.; Oldham, C. J.; Parsons, G. N. Atmospheric Pressure Atomic Layer Deposition of Al2O3 Using Trimethyl Aluminum and Ozone. Langmuir, 2014, 30 (13), 3741 3748 DOI: 10.1021/la500796r.
182 Lee, K.; Losego, M. D.; Kim, D. H.; Parsons, G. N. High performance photocatalytic metal oxide synthetic bi-component nanosheets formed by atomic layer deposition. Mater. Horizons, 2014, 1 (4), 419–423 DOI: 10.1039/c4mh00012a.
181 Lee, K.; Kim, D. H.; Parsons, G. N. Free-Floating Synthetic Nanosheets by Atomic Layer Deposition. ACS Appl. Mater. Interfaces, 2014, 6 (14), 10981–10985 DOI: 10.1021/am502850p.
180 Kim, D. H.; Losego, M. D.; Hanson, K.; Alibabaei, L.; Lee, K.; Meyer, T. J.; Parsons, G. N. Stabilizing chromophore binding on TiO2 for long-term stability of dye-sensitized solar cells using multicomponent atomic layer deposition. Phys. Chem. Chem. Phys., 2014, 16 (18), 8615–8622 DOI: 10.1039/c4cp01130a.
179 Gorham, C. S.; Gaskins, J. T.; Parsons, G. N.; Losego, M. D.; Hopkins, P. E. Density dependence of the room temperature thermal conductivity of atomic layer deposition-grown amorphous alumina (Al2O3). Appl. Phys. Lett., 2014, 104 (25), 253107 DOI: 10.1063/1.4885415.
178 Dandley, E. C.; Needham, C. D.; Williams, P. S.; Brozena, A. H.; Oldham, C. J.; Parsons, G. N. Temperature-dependent reaction between trimethylaluminum and poly(methyl methacrylate) during sequential vapor infiltration: experimental and ab initio analysis. J. Mater. Chem. C, 2014, 2 (44), 9416–9424 DOI: 10.1039/c4tc01293c.
177 Atanasov, S. E.; Oldham, C. J.; Slusarski, K. A.; Taggart-Scarff, J.; Sherman, S. A.; Senecal, K. J.; Filocamo, S. F.; McAllister, Q. P.; Wetzel, E. D.; Parsons, G. N. Improved cut-resistance of Kevlar (R) using controlled interface reactions during atomic layer deposition of ultrathin (< 50 angstrom) inorganic coatings. J. Mater. Chem. A, 2014, 2 (41), 17371–17379 DOI: 10.1039/c4ta03662j.
176 Atanasov, S. E.; Losego, M. D.; Gong, B.; Sachet, E.; Maria, J.-P.; Williams, P. S.; Parsons, G. N. Highly Conductive and Conformal Poly(3,4-ethylenedioxythiophene) (PEDOT) Thin Films via Oxidative Molecular Layer Deposition. Chem. Mat., 2014, 26 (11), 3471–3478 DOI: 10.1021/cm500825b.
175 Alibabaei, L.; Farnum, B. H.; Kalanyan, B.; Brennaman, M. K.; Losego, M. D.; Parsons, G. N.; Meyer, T. J. Atomic Layer Deposition of TiO2 on Mesoporous nanolTO: Conductive Core-Shell Photoanodes for Dye-Sensitized Solar Cells. Nano Lett., 2014, 14 (6), 3255–3261 DOI: 10.1021/nl5006433.
2013
174 Vannucci, A. K.; Alibabaei, L.; Losego, M. D.; Concepcion, J. J.; Kalanyan, B.; Parsons, G. N.; Meyer, T. J. Crossing the divide between homogeneous and heterogeneous catalysis in water oxidation. Proc. Natl. Acad. Sci. U. S. A., 2013, 110 (52), 20918–20922 DOI: 10.1073/pnas.1319832110.
173 Sweet, W. J.; Jur, J. S.; Parsons, G. N. Bi-layer Al2O3/ZnO atomic layer deposition for controllable conductive coatings on polypropylene nonwoven fiber mats. J. Appl. Phys., 2013, 113 (19), 194303 DOI: 10.1063/1.4804960.
172 Petrochenko, P. E.; Scarel, G.; Hyde, G. K.; Parsons, G. N.; Skoog, S. A.; Zhang, Q.; Goering, P. L.; Narayan, R. J. Prevention of Ultraviolet (UV)-Induced Surface Damage and Cytotoxicity of Polyethersulfone Using Atomic Layer Deposition (ALD) Titanium Dioxide. JOM, 2013, 65 (4), 550–556 DOI: 10.1007/s11837-013-0565-8.
171 Peng, Q.; Kalanyan, B.; Hoertz, P. G.; Miller, A.; Kim, D. H.; Hanson, K.; Alibabaei, L.; Liu, J.; Meyer, T. J.; Parsons, G. N.; Glass, J. T. Solution-Processed, Antimony-Doped Tin Oxide Colloid Films Enable High-Performance TiO2 Photoanodes for Water Splitting. Nano Lett., 2013, 13 (4), 1481–1488 DOI: 10.1021/nl3045525.
170 Parsons, G. N.; Elam, J. W.; George, S. M.; Haukka, S.; Jeon, H.; Kessels, W. M. M.; Leskela, M.; Poodt, P.; Ritala, M.; Rossnagel, S. M. History of atomic layer deposition and its relationship with the American Vacuum Society. J. Vac. Sci. Technol. A, 2013, 31 (5), 050818 DOI: 10.1116/1.4816548.
169 Parsons, G. N.; Atanasov, S. E.; Dandley, E. C.; Devine, C. K.; Gong, B.; Jur, J. S.; Lee, K.; Oldham, C. J.; Peng, Q.; Spagnola, J. C.; Williams, P. S. Mechanisms and reactions during atomic layer deposition on polymers. Coord. Chem. Rev., 2013, 257 (23-24), 3323–3331 DOI: 10.1016/j.ccr.2013.07.001.
168 McClure, J. P.; Devine, C. K.; Jiang, R.; Chu, D.; Cuomo, J. J.; Parsons, G. N.; Fedkiw, P. S. Oxygen Electroreduction on Ti- and Fe-Containing Carbon Fibers. J. Electrochem. Soc., 2013, 160 (8), F769–F778 DOI: 10.1149/2.029308jes.
167 McClure, C. D.; Oldham, C. J.; Walls, H. J.; Parsons, G. N. Large effect of titanium precursor on surface reactivity and mechanical strength of electrospun nanofibers coated with TiO2 by atomic layer deposition. J. Vac. Sci. Technol. A, 2013, 31 (6), 061506 DOI: 10.1116/1.4817718.
166 Loebl, A. J.; Oldham, C. J.; Devine, C. K.; Gong, B.; Atanasov, S. E.; Parsons, G. N.; Fedkiw, P. S. Solid Electrolyte Interphase on Lithium-Ion Carbon Nanofiber Electrodes by Atomic and Molecular Layer Deposition. J. Electrochem. Soc., 2013, 160 (11), A1971–A1978 DOI: 10.1149/2.020311jes.
165 Kim, D. H.; Woodroof, M.; Lee, K.; Parsons, G. N. Atomic Layer Deposition of High
Performance Ultrathin TiO2 Blocking Layers for Dye-Sensitized Solar Cells. ChemSusChem,
2013, 6 (6), 1014–1020 DOI: 10.1002/cssc.201300067.
164 Kalanyan, B.; Oldham, C. J.; Sweet, W. J.; Parsons, G. N. Highly Conductive and Flexible Nylon-6 Nonwoven Fiber Mats Formed using Tungsten Atomic Layer Deposition. ACS Appl. Mater. Interfaces, 2013, 5 (11), 5253–5259 DOI: 10.1021/am401095r.
163 Kalanyan, B.; Losego, M. D.; Oldham, C. J.; Parsons, G. N. Low-Temperature Atomic Layer Deposition of Tungsten using Tungsten Hexafluoride and Highly-diluted Silane in Argon. Chem. Vapor Depos., 2013, 19 (4-6), 161–166 DOI: 10.1002/cvde.201307053.
162 Hanson, K.; Losego, M. D.; Kalanyan, B.; Parsons, G. N.; Meyer, T. J. Stabilizing Small Molecules on Metal Oxide Surfaces Using Atomic Layer Deposition. Nano Lett., 2013, 13 (10), 4802–4809 DOI: 10.1021/nl402416s.
161 Hanson, K.; Losego, M. D.; Kalanyan, B.; Ashford, D. L.; Parsons, G. N.; Meyer, T. J.
Stabilization of [Ru(bpy)(2)(4,4 ’-(PO3H2)bpy)](2+) on Mesoporous TiO2 with Atomic Layer
Deposition of Al 2 O 3. Chem. Mat., 2013, 25 (1), 3–5 DOI: 10.1021/cm303172w.
160 Aykut, Y.; Parsons, G. N.; Pourdeyhimi, B.; Khan, S. A. Synthesis of Mixed Ceramic MgxZn1-xO Nanofibers via Mg2+ Doping Using Sol-Gel Electrospinning. Langmuir, 2013, 29 (12), 4159–4166 DOI: 10.1021/la400281c.
159 Arpin, K. A.; Losego, M. D.; Cloud, A. N.; Ning, H.; Mallek, J.; Sergeant, N. P.; Zhu, L.; Yu, Z.; Kalanyan, B.; Parsons, G. N.; Girolami, G. S.; Abelson, J. R.; Fan, S.; Braun, P. V. Three- dimensional self-assembled photonic crystals with high temperature stability for thermal emission modification. Nat. Commun., 2013, 4, 2630 DOI: 10.1038/ncomms3630.
158 Alibabaei, L.; Brennaman, M. K.; Norris, M. R.; Kalanyan, B.; Song, W.; Losego, M. D.; Concepcion, J. J.; Binstead, R. A.; Parsons, G. N.; Meyer, T. J. Solar water splitting in a molecular photoelectrochemical cell. Proc. Natl. Acad. Sci. U. S. A., 2013, 110 (50), 20008 20013 DOI: 10.1073/pnas.1319628110.
2012
157 Vasquez, K. A.; Vincent-Johnson, A. J.; Hughes, W. C.; Augustine, B. H.; Lee, K.; Parsons, G. N.; Scarel, G. Wetting properties induced in nano-composite POSS-MA polymer films by atomic layer deposited oxides. J. Vac. Sci. Technol. A, 2012, 30 (1), 01A105 DOI: 10.1116/1.3639134.
156 Poodt, P.; Cameron, D. C.; Dickey, E.; George, S. M.; Kuznetsov, V.; Parsons, G. N.; Roozeboom, F.; Sundaram, G.; Vermeer, A. Spatial atomic layer deposition: A route towards further industrialization of atomic layer deposition. J. Vac. Sci. Technol. A, 2012, 30 (1), 010802 DOI: 10.1116/1.3670745.
155 Peng, Q.; Lewis, J. S.; Hoertz, P. G.; Glass, J. T.; Parsons, G. N. Atomic layer deposition for electrochemical energy generation and storage systems. J. Vac. Sci. Technol. A, 2012, 30 (1), 010803 DOI: 10.1116/1.3672027.
154 Peng, Q.; Efimenko, K.; Genzer, J.; Parsons, G. N. Oligomer Orientation in Vapor Molecular-Layer-Deposited Alkyl-Aromatic Polyamide Films. Langmuir, 2012, 28 (28), 10464 10470 DOI: 10.1021/la3017936.
153 Park, K. J.; Parsons, G. N. Atomic layer deposition of Ru onto organic monolayers: Shifting metal effective work function using monolayer structure. J. Vac. Sci. Technol. A, 2012, 30 (1), 01A162 DOI: 10.1116/1.3671938.
152 Mousa, M. B. M.; Oldham, C. J.; Jur, J. S.; Parsons, G. N. Effect of temperature and gas velocity on growth per cycle during Al2O3 and ZnO atomic layer deposition at atmospheric pressure. J. Vac. Sci. Technol. A, 2012, 30 (1), 01A155 DOI: 10.1116/1.3670961.
151 Lee, K.; Jur, J. S.; Kim, D. H.; Parsons, G. N. Mechanisms for hydrophilic/hydrophobic wetting transitions on cellulose cotton fibers coated using Al2O3 atomic layer deposition. J. Vac. Sci. Technol. A, 2012, 30 (1), 01A163 DOI: 10.1116/1.3671942.
150 Kim, D. H.; Koo, H.-J.; Jur, J. S.; Woodroof, M.; Kalanyan, B.; Lee, K.; Devine, C. K.; Parsons, G. N. Stable anatase TiO2 coating on quartz fibers by atomic layer deposition for photoactive light-scattering in dye-sensitized solar cells. Nanoscale, 2012, 4 (15), 4731–4738 DOI: 10.1039/c2nr30939d.
149 Jur, J. S.; Parsons, G. N. Nanoscale ceramic surface modification of textiles by atomic layer deposition. Am. Ceram. Soc. Bull., 2012, 91 (6), 24–27.
148 Hanson, C. A.; Oldham, C. J.; Parsons, G. N. Paper deacidification and UV protection using ZnO atomic layer deposition. J. Vac. Sci. Technol. A, 2012, 30 (1), 01A117 DOI: 10.1116/1.3656251.
147 Gong, B.; Spagnola, J. C.; Parsons, G. N. Hydrophilic mechanical buffer layers and stable hydrophilic finishes on polydimethylsiloxane using combined sequential vapor infiltration and atomic/molecular layer deposition. J. Vac. Sci. Technol. A, 2012, 30 (1), 01A156 DOI: 10.1116/1.3670963.
146 Gong, B.; Spagnola, J. C.; Arvidson, S. A.; Khan, S. A.; Parsons, G. N. Directed inorganic modification of bi-component polymer fibers by selective vapor reaction and atomic layer deposition. Polymer, 2012, 53 (21), 4631–4636 DOI: 10.1016/j.polymer.2012.08.018.
145 Gong, B.; Parsons, G. N. Quantitative in situ infrared analysis of reactions between trimethylaluminum and polymers during Al2O3 atomic layer deposition. J. Mater. Chem., 2012, 22 (31), 15672–15682 DOI: 10.1039/c2jm32343e.
144 Gong, B.; Parsons, G. N. Caprolactone Ring-Opening Molecular Layer Deposition of Organic Aluminum Oxide Polymer Films. ECS J. Solid State Sci. Technol., 2012, 1 (4), P210 P215 DOI: 10.1149/2.023204jss.
143 Gong, B.; Kim, D. H.; Parsons, G. N. Mesoporous Metal Oxides by Vapor Infiltration and Atomic Layer Deposition on Ordered Surfactant Polymer Films. Langmuir 2012, 28 (32), 11915–11922 DOI: 10.1021/la302027b.
142 Aykut, Y.; Saquing, C. D.; Pourdeyhimi, B.; Parsons, G. N.; Khan, S. A. Templating Quantum Dot to Phase-Transformed Electrospun TiO2 Nanofibers for Enhanced Photo Excited Electron Injection. ACS Appl. Mater. Interfaces, 2012, 4 (8), 3837–3845 DOI: 10.1021/am300524a.
141 Akyildiz, H. I.; Padbury, R. P.; Parsons, G. N.; Jur, J. S. Temperature and Exposure Dependence of Hybrid Organic-Inorganic Layer Formation by Sequential Vapor Infiltration into Polymer Fibers. Langmuir, 2012, 28 (44), 15697–15704 DOI: 10.1021/la302991c.
2011
140 Wang, X.; Krommenhoek, P. J.; Bradford, P. D.; Gong, B.; Tracy, J. B.; Parsons, G. N.; Luo, T. J. M.; Zhu, Y. T. Coating Alumina on Catalytic Iron Oxide Nanoparticles for Synthesizing Vertically Aligned Carbon Nanotube Arrays. ACS Appl. Mater. Interfaces, 2011, 3 (11), 4180 4184 DOI: 10.1021/am201082m.
139 Peng, Q.; Gong, B.; Parsons, G. N. Making inert polypropylene fibers chemically responsive by combining atomic layer deposition and vapor phase chemical grafting. Nanotechnology, 2011, 22 (15), 155601 DOI: 10.1088/0957-4484/22/15/155601.
138 Parsons, G. N.; George, S. M.; Knez, M. Progress and future directions for atomic layer deposition and ALD-based chemistry. MRS Bull., 2011, 36 (11), 865–871 DOI: 10.1557/mrs.2011.238.
137 Oldham, C. J.; Gong, B.; Spagnola, J. C.; Jur, J. S.; Senecal, K. J.; Godfrey, T. A.; Parsons, G. N. Encapsulation and Chemical Resistance of Electrospun Nylon Nanofibers Coated Using Integrated Atomic and Molecular Layer Deposition. J. Electrochem. Soc., 2011, 158 (9), D549–D556 DOI: 10.1149/1.3609046.
136 Kim, E.; Kim, Y.; Kim, D. H.; Lee, K.; Parsons, G. N.; Park, K. SiNx charge-trap nonvolatile
memory based on ZnO thin-film transistors. Appl. Phys. Lett., 2011, 99 (11), 112115 DOI:
10.1063/1.3640221.
135 Kim, E.; Lee, K.; Kim, D.; Parsons, G. N.; Park, K. SiNx Charge Trap Nonvolatile Memory Based on ZnO Thin Film Transistor Prepared by Atomic Layer Deposition. In Physics of Semiconductors: 30th International Conference on the Physics; Ihm, J., Cheong, H., Eds.; Amer Inst Physics: Melville, 2011; Vol. 1399.
134 Kalanyan, B.; Parsons, G. N. Atomic Layer Deposited Oxides for Passivation of Silicon Photoanodes for Solar Photoelectrochemical Cells. In Atomic Layer Deposition Applications 7; Elam, J. W., Londergan, A., VanDerStraten, O., Roozeboom, F., DeGendt, S., Bent, S. F., Delabie, A., Eds.; Electrochemical Soc Inc: Pennington, 2011; Vol. 41, pp 285–292.
133 Jur, J. S.; Sweet, W. J.; Oldham, C. J.; Parsons, G. N. Atomic Layer Deposition of Conductive Coatings on Cotton, Paper, and Synthetic Fibers: Conductivity Analysis and Functional Chemical Sensing Using “All-Fiber” Capacitors. Adv. Funct. Mater. 2011, 21 (11), 1993–2002 DOI: 10.1002/adfm.201001756.
132 Jur, J. S.; Parsons, G. N. Atomic Layer Deposition of Al2O3 and ZnO at Atmospheric Pressure in a Flow Tube Reactor. ACS Appl. Mater. Interfaces, 2011, 3 (2), 299–308 DOI: 10.1021/am100940g.
131 Johnston-Peck, A. C.; Scarel, G.; Wang, J.; Parsons, G. N.; Tracy, J. B. Sinter-free phase conversion and scanning transmission electron microscopy of FePt nanoparticle monolayers. Nanoscale, 2011, 3 (10), 4142–4149 DOI: 10.1039/c1nr10567a.
130 Hyde, G. K.; Stewart, S. M.; Scarel, G.; Parsons, G. N.; Shih, C.-C.; Shih, C.-M.; Lin, S.-J.; Su, Y.-Y.; Monteiro-Riviere, N. A.; Narayan, R. J. Atomic layer deposition of titanium dioxide on cellulose acetate for enhanced hemostasis. Biotechnol. J., 2011, 6 (2), 213–223 DOI: 10.1002/biot.201000342.
129 Gong, B.; Peng, Q.; Parsons, G. N. Conformal Organic-Inorganic Hybrid Network Polymer Thin Films by Molecular Layer Deposition using Trimethylaluminum and Glycidol (vol 115, pg 5930, 2011). J. Phys. Chem. B, 2011, 115 (37), 11028–11028 DOI: 10.1021/jp205915n.
128 Gong, B.; Peng, Q.; Parsons, G. N. Conformal Organic – Inorganic Hybrid Network Polymer Thin Films by Molecular Layer Deposition using Trimethylaluminum and Glycidol. J. Phys. Chem. B, 2011, 115 (19), 5930–5938 DOI: 10.1021/jp201186k.
127 Gong, B.; Peng, Q.; Na, J.-S.; Parsons, G. N. Highly active photocatalytic ZnO nanocrystalline rods supported on polymer fiber mats: Synthesis using atomic layer deposition and hydrothermal crystal growth. Appl. Catal. A-Gen., 2011, 407 (1-2), 211–216 DOI: 10.1016/j.apcata.2011.08.041.
126 Gong, B.; Peng, Q.; Jur, J. S.; Devine, C. K.; Lee, K.; Parsons, G. N. Sequential Vapor Infiltration of Metal Oxides into Sacrificial Polyester Fibers: Shape Replication and Controlled Porosity of Microporous/Mesoporous Oxide Monoliths. Chem. Mat., 2011, 23 (15), 3476–3485 DOI: 10.1021/cm200694w.
125 Devine, C. K.; Oldham, C. J.; Jur, J. S.; Gong, B.; Parsons, G. N. Fiber Containment for Improved Laboratory Handling and Uniform Nanocoating of Milligram Quantities of Carbon Nanotubes by Atomic Layer Deposition. Langmuir, 2011, 27 (23), 14497–14507 DOI: 10.1021/la202677u.
2010
124 Spagnola, J. C.; Gong, B.; Parsons, G. N. Surface texture and wetting stability of
polydimethylsiloxane coated with aluminum oxide at low temperature by atomic layer deposition.
J. Vac. Sci. Technol. A, 2010, 28 (6), 1330–1337 DOI: 10.1116/1.3488604.
123 Spagnola, J. C.; Gong, B.; Arvidson, S. A.; Jur, J. S.; Khan, S. A.; Parsons, G. N. Surface and
sub-surface reactions during low temperature aluminium oxide atomic layer deposition on fiber-
forming polymers. J. Mater. Chem., 2010, 20 (20), 4213–4222 DOI: 10.1039/c0jm00355g.
122 Scarel, G.; Na, J.-S.; Parsons, G. N. Angular behavior of the Berreman effect investigated in
uniform Al2O3 layers formed by atomic layer deposition. J. Phys.-Condes. Matter, 2010, 22 (15),
155401 DOI: 10.1088/0953-8984/22/15/155401.
121 Scarel, G.; Na, J.-S.; Gong, B.; Parsons, G. N. Phonon Response in the Infrared Region to
Thickness of Oxide Films Formed by Atomic Layer Deposition. Appl. Spectrosc., 2010, 64 (1),
120–126.
120 Oldham, C. J.; Gong, B.; Spagnola, J. C.; Jur, J. S.; Senecal, K. J.; Godfrey, T. A.; Parsons, G. N. Atomic Layer Deposition on Polymers: Applications to Physical Encapsulation of Electrospun Nylon Nanofibers. In Atomic Layer Deposition Applications 6; Elam, J. W., DeGendt, S., VanDerStraten, O., Delabie, A., Londergan, A., Bent, S. F., Roozeboom, F., Eds.; Electrochemical Soc Inc: Pennington, 2010; Vol. 33, pp 279–290.
119 Na, J.-S.; Scarel, G.; Parsons, G. N. In Situ Analysis of Dopant Incorporation, Activation, and
Film Growth during Thin Film ZnO and ZnO:Al Atomic Layer Deposition. J. Phys. Chem. C,
2010, 114 (1), 383–388 DOI: 10.1021/jp908332q.
118 Jur, J. S.; Spagnola, J. C.; Lee, K.; Gong, B.; Peng, Q.; Parsons, G. N. Temperature Dependent Subsurface Growth during Atomic Layer Deposition on Polypropylene and Cellulose Fibers. Langmuir, 2010, 26 (11), 8239–8244 DOI: 10.1021/la904604z.
117 Hyde, G. K.; Scarel, G.; Spagnola, J. C.; Peng, Q.; Lee, K.; Gong, B.; Roberts, K. G.; Roth, K. M.; Hanson, C. A.; Devine, C. K.; Stewart, S. M.; Hojo, D.; Na, J.-S.; Jur, J. S.; Parsons, G. N. Atomic Layer Deposition and Abrupt Wetting Transitions on Nonwoven Polypropylene and Woven Cotton Fabrics. Langmuir, 2010, 26 (4), 2550–2558 DOI: 10.1021/la902830d.
116 Gittard, S. D.; Hojo, D.; Hyde, G. K.; Scarel, G.; Narayan, R. J.; Parsons, G. N. Antifungal
Textiles Formed Using Silver Deposition in Supercritical Carbon Dioxide. J. Mater. Eng.
Perform., 2010, 19 (3), 368–373 DOI: 10.1007/s11665-009-9514-7.
2009
115 Peng, Q.; Sun, X.-Y.; Spagnola, J. C.; Saquing, C.; Khan, S. A.; Spontak, R. J.; Parsons, G. N.Bi-directional Kirkendall Effect in Coaxial Microtuble Nanolaminate Assemblies Fabricated by Atomic Layer Deposition. ACS Nano, 2009, 3 (3), 546–554 DOI: 10.1021/nn8006543.
114 Peng, Q.; Gong, B.; VanGundy, R. M.; Parsons, G. N. “Zincone” Zinc Oxide-Organic Hybrid Polymer Thin Films Formed by Molecular Layer Deposition. Chem. Mat., 2009, 21 (5), 820–830 DOI: 10.1021/cm8020403.
113 Na, J.-S.; Peng, Q.; Scarel, G.; Parsons, G. N. Role of Gas Doping Sequence in Surface Reactions and Dopant Incorporation during Atomic Layer Deposition of Al-Doped ZnO. Chem. Mat., 2009, 21 (23), 5585–5593 DOI: 10.1021/cm901404p.
112 Na, J.-S.; Gong, B.; Scarel, G.; Parsons, G. N. Surface Polarity Shielding and Hierarchical ZnO Nano-Architectures Produced Using Sequential Hydrothermal Crystal Synthesis and Thin Film Atomic Layer Deposition. ACS Nano, 2009, 3 (10), 3191–3199 DOI: 10.1021/nn900702e.
111 Hyde, G. K.; McCullen, S. D.; Jeon, S.; Stewart, S. M.; Jeon, H.; Loboa, E. G.; Parsons, G. N. Atomic layer deposition and biocompatibility of titanium nitride nano-coatings on cellulose fiber substrates. Biomed. Mater., 2009, 4 (2), 025001 DOI: 10.1088/1748-6041/4/2/025001.
2008
110 Scarel, G.; Hyde, G. K.; Hojo, D.; Parsons, G. N. Berreman effect in infrared absorption spectroscopy of ionic oxide coatings formed by atomic layer deposition on three-dimensional structures. J. Appl. Phys., 2008, 104 (9), 094314 DOI: 10.1063/1.3013439.
109 Peng, Q.; Spagnola, J. C.; Parsons, G. N. Self-catalyzed hydrogenolysis of nickelocene: Functional metal coating of three dimensional nanosystems at low temperature. J. Electrochem. Soc., 2008, 155 (9), D580–D582 DOI: 10.1149/1.2946723.
108 Peng, Q.; Spagnola, J. C.; Daisuke, H.; Park, K. J.; Parsons, G. N. Conformal metal oxide coatings on nanotubes by direct low temperature metal-organic pyrolysis in supercritical carbon dioxide. J. Vac. Sci. Technol. B, 2008, 26 (3), 978–982 DOI: 10.1116/1.2917072.
107 Peng, Q.; Hojo, D.; Park, K. J.; Parsons, G. N. Low temperature metal oxide film deposition and reaction kinetics in supercritical carbon dioxide. Thin Solid Films, 2008, 516 (15), 4997–5003 DOI: 10.1016/j.tsf.2007.10.057.
106 Na, J.-S.; Ayres, J. A.; Chandra, K. L.; Gorman, C. B.; Parsons, G. N. Nanoencapsulation and Stabilization of Single Molecule/Particle Electronic Nanoassemblies Using Low Temperature Atomic Layer Deposition. J. Phys. Chem. C, 2008, 112 (51), 20510–20517 DOI: 10.1021/jp8066298.
2007
105 Peng, Q.; Sun, X.-Y.; Spagnola, J. C.; Hyde, G. K.; Spontak, R. J.; Parsons, G. N. Atomic layer deposition on electrospun polymer fibers as a direct route to Al2O3 microtubes with precise wall thickness control. Nano Lett., 2007, 7 (3), 719–722 DOI: 10.1021/nl062948i.
104 Park, K. J.; Terry, D. B.; Stewart, S. M.; Parsons, G. N. In situ Auger electron spectroscopy study of atomic layer deposition: Growth initiation and interface formation reactions during ruthenium ALD on Si-H, SiO2, and HfO2 surfaces. Langmuir, 2007, 23 (11), 6106–6112 DOI: 10.1021/la061898u.
103 Na, J.-S.; Ayres, J.; Chandra, K. L.; Gorman, C. B.; Parsons, G. N. Real-time conductivity analysis through single-molecule electrical junctions. Nanotechnology, 2007, 18 (42), 424001 DOI: 10.1088/0957-4484/18/42/424001.
102 Na, J.-S.; Ayres, J.; Chandra, K. L.; Chu, C.; Gorman, C. B.; Parsons, G. N. Conduction mechanisms and stability of single molecule nanoparticle/molecule/nanoparticle junctions. Nanotechnology, 2007, 18 (3), 035203 DOI: 10.1088/0957 4484/18/3/035203.
101 Hyde, G. K.; Park, K. J.; Stewart, S. M.; Hinestroza, J. P.; Parsons, G. N. Atomic layer deposition of Conformal inorganic nanoscale coatings on three-dimensional natural fiber systems: Effect of surface topology on film growth characteristics. Langmuir, 2007, 23 (19), 9844–9849 DOI: 10.1021/la701449t.
100 Chu, C.; Na, J.-S.; Parsons, G. N. Conductivity in alkylamine/gold and alkanethiol/gold molecular junctions measured in molecule/nanoparticle/molecule bridges and conducting probe structures. J. Am. Chem. Soc., 2007, 129 (8), 2287–2296 DOI: 10.1021/ja064968s.
99 Chu, C.; Ayres, J. A.; Stefanescu, D. M.; Walker, B. R.; Gorman, C. B.; Parsons, G. N. Enhanced conduction through isocyanide terminal groups in alkane and biphenylene molecules measured in molecule/nanoparticle/molecule junctions. J. Phys. Chem. C, 2007, 111 (22), 8080–8085 DOI: 10.1021/jp065377r.
2006
98 Park, K. J.; Parsons, G. N. Selective area atomic layer deposition of rhodium and effective work function characterization in capacitor structures. Appl. Phys. Lett., 2006, 89 (4), 043111 DOI: 10.1063/1.2234846.
97 Gougousi, T.; Terry, D. B.; Parsons, G. N. Charge generation during oxidation of thin Hf metal films on silicon. Thin Solid Films, 2006, 513 (1-2), 201–205 DOI: 10.1016/j.tsf.2006.02.004.
96 Chu, C.; Parsons, G. N. Solvent enhanced resist flow for room temperature imprint lithography. J. Vac. Sci. Technol. B, 2006, 24 (2), 818–822 DOI: 10.1116/1.2180258.
95 Barua, D.; Gougousi, T.; Young, E. D.; Parsons, G. N. Supercritical-carbon dioxide-assisted cyclic deposition of metal oxide and metal thin films. Appl. Phys. Lett., 2006, 88 (9), 092904 DOI: 10.1063/1.218165.
2005
94 Sivasubramani, P.; Zhao, P.; Kim, M. J.; Gnade, B. E.; Wallace, R. M.; Edge, L. F.; Schlom, D. G.; Parsons, G. N.; Misra, V. Thermal stability studies of advanced gate stack structures on Si (100). In Characterization and Metrology for ULSI Technology 2005; Seiler, D. G., Diebold, A. C., McDonald, R., Ayre, C. R., Khosla, R. P., Secula, E. M., Eds.; Amer Inst Physics: Melville, 2005; Vol. 788, pp 156–160.
93 Park, K. J.; Doub, J. M.; Gougousi, T.; Parsons, G. N. Microcontact patterning of ruthenium gate electrodes by selective area atomic layer deposition. Appl. Phys. Lett., 2005, 86 (5), 051903 DOI: 10.1063/1.1852079.
92 Kelly, M. J.; Han, J. H.; Musgrave, C. B.; Parsons, G. N. In situ infrared spectroscopy and density functional theory modeling of hafnium alkylamine adsorption on Si-OH and Si-H surfaces. Chem. Mat., 2005, 17 (21), 5305–5314 DOI: 10.1021/cm051064h.
91. Gougousi, T.; Barua, D.; Young, E. D.; Parsons, G. N. Metal oxide thin films deposited from metal organic precursors in supercritical CO2 solutions. Chem. Mat., 2005, 17 (20), 5093 5100 DOI: 10.1021/cm0510965.
2004
90 Park, K. J.; Parsons, G. N. Bulk and interface charge in low temperature silicon nitride for thin film transistors on plastic substrates. J. Vac. Sci. Technol. A, 2004, 22 (6), 2256–2260 DOI: 10.1116/1.1795822.
89 Niu, D.; Ashcraft, R. W.; Hinkle, C.; Parsons, G. N. Effect of N-2 plasma on yttrium oxide and yttrium-oxynitride dielectrics. J. Vac. Sci. Technol. A, 2004, 22 (3), 445–451 DOI: 10.1116/1.1666880.
88 Gougousi, T.; Parsons, G. N. Postdeposition reactivity of sputter-deposited high-dielectric-constant films with ambient H2O and carbon-containing species. J. Appl. Phys., 2004, 95 (3), 1391–1396 DOI: 10.1063/1.1636513.’
2003
87 Ulrich, M. D.; Rowe, J. E.; Niu, D.; Parsons, G. N. Bonding and structure of ultrathin yttrium oxide films for Si field effect transistor gate dielectric applications. J. Vac. Sci. Technol. B, 2003, 21 (4), 1792–1797 DOI: 10.1116/1.1593647.
86 Niu, D.; Ashcraft, R. W.; Chen, Z.; Stemmer, S.; Parsons, G. N. Chemical, physical, and electrical characterizations of oxygen plasma assisted chemical vapor deposited yttrium oxide on silicon. J. Electrochem. Soc., 2003, 150 (5), F102–F109 DOI: 10.1149/1.1566415.
85 Gougousi, T.; Niu, D.; Ashcraft, R. W.; Parsons, G. N. Carbonate formation during post- deposition ambient exposure of high-k dielectrics. Appl. Phys. Lett., 2003, 83 (17), 3543–3545 DOI: 10.1063/1.1623316.
84 Gougousi, T.; Kelly, M. J.; Terry, D. B.; Parsons, G. N. Properties of La-silicate high-K dielectric films formed by oxidation of La on silicon. J. Appl. Phys., 2003, 93 (3), 1691–1696 DOI: 10.1063/1.1531818.
83 Gougousi, T.; Kelly, M. J.; Parsons, G. N. Kinetics of charge generation during formation of Hf and Zr silicate dielectrics. In CMOS Front-End Materials and Process Technology; King, T. J., Yu, B., Lander, R. J. P., Saito, S., Eds.; MRS: Warrendale, 2003; Vol. 765, pp 79–84.
2002
82 Stemmer, S.; Klenov, D. O.; Chen, Z. Q.; Niu, D.; Ashcraft, R. W.; Parsons, G. N. Reactions of Y2O3 films with (001) Si substrates and with polycrystalline Si capping layers. Appl. Phys. Lett., 2002, 81 (4), 712–714 DOI: 10.1063/1.1496500.
81 Niu, D.; Ashcraft, R. W.; Stemmer, S.; Parsons, G. N. Interface reactions during oxygen plasma assisted chemical vapor deposition of yttrium oxide on silicon; Huff, H. R., Fabry, L., Kishino, S., Eds.; ECS Pennington, 2002; Vol. 2002.
80 Niu, D.; Ashcraft, R. W.; Parsons, G. N. Water absorption and interface reactivity of yttrium
oxide gate dielectrics on silicon. Appl. Phys. Lett., 2002, 80 (19), 3575–3577 DOI:
10.1063/1.1477268.
79 Niu, D.; Ashcraft, R. W.; Kelly, M. J.; Chambers, J. J.; Klein, T. M.; Parsons, G. N. Elementary reaction schemes for physical and chemical vapor deposition of transition metal oxides on silicon for high-k gate dielectric applications. J. Appl. Phys., 2002, 91 (9), 6173–6180 DOI: 10.1063/1.1468253.
78 Niu, D.; Ashcraft, R. W.; Chen, Z.; Stemmer, S.; Parsons, G. N. Electron energy-loss spectroscopy analysis of interface structure of yttrium oxide gate dielectrics on silicon. Appl. Phys. Lett., 2002, 81 (4), 676–678 DOI: 10.1063/1.1496138.
77 Misra, V.; Lucovsky, G.; Parsons, G. N. Issues in high-kappa gate stack interfaces. MRS Bull., 2002, 27 (3), 212–216 DOI: 10.1557/mrs2002.73.
76 Gupta, A.; Yang, H.; Parsons, G. N. Ab initio analysis of silyl precursor physisorption and hydrogen abstraction during low temperature silicon deposition. Surf. Sci., 2002, 496 (3), 307–317 DOI: 10.1016/S0039-6028(01)01467-4.
75 Gougousi, T.; Kelly, M. J.; Parsons, G. N. The role of the OH species in high-k/polycrystalline silicon gate electrode interface reactions. Appl. Phys. Lett., 2002, 80 (23), 4419–4421 DOI: 10.1063/1.1485122.
74 Bray, K. R.; Parsons, G. N. Surface transport kinetics in low temperature silicon deposition determined from topography evolution. Phys. Rev. B, 2002, 65 (3), 035311 DOI: 10.1103/PhysRevB.65.035311.
73 Bray, K. R.; Gupta, A.; Parsons, G. N. Effect of hydrogen on adsorbed precursor diffusion kinetics during hydrogenated amorphous silicon deposition. Appl. Phys. Lett., 2002, 80 (13), 2356–2358 DOI: 10.1063/1.1467616.
2001
72 Chambers, J. J.; Parsons, G. N. Physical and electrical characterization of ultrathin yttrium silicate insulators on silicon. J. Appl. Phys., 2001, 90 (2), 918–933 DOI: 10.1063/1.1375018.
71 Chambers, J. J.; Busch, B. W.; Schulte, W. H.; Gustafsson, T.; Garfunkel, E.; Wang, S.; Maher, D. M.; Klein, T. M.; Parsons, G. N. Effects of surface pretreatments on interface structure during formation of ultra-thin yttrium silicate dielectric films on silicon. Appl. Surf. Sci., 2001, 181 (1-2), 78–93 DOI: 10.1016/S0169- 4332(01)00373-7.
2000
70 Parsons, G. N. Surface reactions in very low temperatur (< 150 degrees C) hydrogenated amorphous silicon deposition, and applications to thin film transistors. J. Non-Cryst. Solids, 2000, 266, 23–30 DOI: 10.1016/S0022-3093(99)00713-9.
69 Yang, C. S.; Smith, L. L.; Arthur, C. B.; Parsons, G. N. Stability of low-temperature amorphous silicon thin film transistors formed on glass and transparent plastic substrates. J. Vac. Sci.Technol. B, 2000, 18 (2), 683–689 DOI: 10.1116/1.591259.
68 Gupta, A.; Parsons, G. N. Bond strain, chemical induction, and OH incorporation in low- temperature (350-100 degrees C) plasma deposited silicon dioxide films. J. Vac. Sci. Technol. B, 2000, 18 (3), 1764–1769 DOI: 10.1116/1.591468.
67 Chambers, J. J.; Parsons, G. N. Yttrium silicate formation on silicon: Effect of silicon preoxidation and nitridation on interface reaction kinetics. Appl. Phys. Lett., 2000, 77 (15), 2385–2387 DOI: 10.1063/1.1316073.
1999
66 Klein, T. M.; Niu, D.; Epling, W. S.; Li, W.; Maher, D. M.; Hobbs, C. C.; Hegde, R. I.; Baumvol, I. J. R.; Parsons, G. N. Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al2O3 thin films on Si(100). Appl. Phys. Lett., 1999, 75 (25), 4001–4003 DOI: 10.1063/1.125519.
65 Klein, T. M.; Anderson, T. M.; Chowdhury, A. I.; Parsons, G. N. Hydrogenated silicon nitride thin films deposited between 50 and 250 degrees C using nitrogen/silane mixtures with helium dilution. J. Vac. Sci. Technol. A-Vac. Surf. Films, 1999, 17 (1), 108 112 DOI: 10.1116/1.582104.
1998
64 Yang, C. S.; Read, W. W.; Arthur, C.; Srinivasan, E.; Parsons, G. N. Self-aligned gate and source drain contacts in inverted staggered a-Si : H thin-film transistors fabricated using selective area silicon PECVD. IEEE Electron Device Lett., 1998, 19 (6), 180 182 DOI: 10.1109/55.678536.
63 Srinivasan, E.; Parsons, G. N. Hydrogen abstraction kinetics and crystallization in low temperature plasma deposition of silicon. Appl. Phys. Lett., 1998, 72 (4), 456–458 DOI: 10.1063/1.120785.
62 Smith, L. L.; Read, W. W.; Yang, C. S.; Srinivasan, E.; Courtney, C. H.; Lamb, H. H.; Parsons, G. N. Plasma enhanced selective area microcrystalline silicon deposition on hydrogenated amorphous silicon: Surface modification for controlled nucleation. J. Vac. Sci. Technol. A-Vac. Surf. Films, 1998, 16 (3), 1316–1320 DOI: 10.1116/1.581144.
61 Smith, L. L.; Arthur, C. B.; Yang, C. S.; Parsons, G. N. Substrate surface morphology and growth evolution of low temperature silicon nitride on transparent plastics. In Flat-Panel Display Materials-1998; Parsons, G. N., Tsai, C. C., Fahlen, T. S., Seager, C. H., Eds.; MRS Warrendale, 1998; Vol. 508, pp 133–138.
60 Parsons, G. N.; Yang, C. S.; Klein, T. M.; Smith, L. Reaction processes for low temperature (< 150 degrees C) plasma enhanced deposition of hydrogenated amorphous silicon thin film transistors on transparent plastic substrates. In Flat-Panel Display Materials-1998; Parsons, G. N., Tsai, C. C., Fahlen, T. S., Seager, C. H., Eds.; Materials Research Society: Warrendale, 1998; Vol. 508, pp 19–24.
59 Min, K.; Chambers, J. J.; Parsons, G. N.; Hauser, J. R. Monitoring of sidewall spacer etch by optical emission spectroscopy and mass spectroscopy. In In Situ Process Diagnostics and Intelligent Materials Processing; Rosenthal, P. A., Duncan, W. M., Woollam, J. A., Eds.; Materials Research Society: Warrendale, 1998; Vol. 502, pp 157–162.
58 Chowdhury, A. I.; Klein, T. M.; Parsons, G. N. In-situ real time mass spectroscopic sensing and mass balance modeling of selective area silicon PECVD. In Characterization and Metrology for Ulsi Technology; Seiler, D. G., Diebold, A. C., Bullis, W. M., Shaffner, T. J., McDonald, R., Walters, E. J., Eds.; Amer Inst Physics: Melville, 1998; Vol. 449, pp 363–367.
57 Chowdhury, A. I.; Klein, T. M.; Anderson, T. M.; Parsons, G. N. Silane consumption and conversion analysis in amorphous silicon and silicon nitride plasma deposition using in situ mass spectroscopy. J. Vac. Sci. Technol. A-Vac. Surf. Films, 1998, 16 (3), 1852–1856 DOI: 10.1116/1.581117.
56 Chambers, J. J.; Min, K.; Parsons, G. N. Endpoint uniformity sensing and analysis in silicon dioxide plasma etching using in situ mass spectrometry. J. Vac. Sci. Technol. B, 1998, 16 (6), 2996–3002 DOI: 10.1116/1.590332.
55 Chambers, J. J.; Min, K.; Hauser, J. R.; Parsons, G. N. Material balance modeling of end-point uniformity in silicon dioxide plasma etching. In In Situ Process Diagnostics and Intelligent Materials Processing; Rosenthal, P. A., Duncan, W. M., Woollam, J. A., Eds.; MRS Warrendale, 1998; Vol. 502, pp 41–46.
1997
54 Yang, C. S.; Read, W. W.; Arthur, C. B.; Parsons, G. N. Comparison of conventional and self- aligned a-Si:H thin film transistors. In Flat Panel Display Materials Iii; Fulks, R. T., Parsons, G. N., Slobodin, D. E., Yuzuriha, T. H., Eds.; MRS Warrendale, 1997; Vol. 471, pp 179–184.
53 Srinivasan, E.; Parsons, G. N. Real-time kinetic analysis of hydrogen abstraction and etching reactions using pulsed-gas PECVD of amorphous and microcrystalline silicon. In Amorphous and Microcrystalline Silicon Technology – 1997; Wagner, S., Hack, M., Schiff, E. A., Schropp, R., Shimizu, I., Eds.; MRS Warrendale, 1997; Vol. 467, pp 501–506.
52 Srinivasan, E.; Parsons, G. N. Hydrogen elimination and phase transitions in pulsed-gas plasma deposition of amorphous and microcrystalline silicon. J. Appl. Phys., 1997, 81 (6), 2847 2855 DOI: 10.1063/1.364309.
51 Srinivasan, E.; Lloyd, D. A.; Parsons, G. N. Dominant monohydride bonding in hydrogenated amorphous silicon thin films formed by plasma enhanced chemical vapor deposition at room temperature. J. Vac. Sci. Technol. A-Vac. Surf. Films, 1997, 15 (1), 77–84 DOI: 10.1116/1.580480.
50 Srinivasan, E.; Ellis, S. J.; Nemanich, R. J.; Parsons, G. N. Large crystallite polysilicon deposited using pulsed-gas PECVD at temperatures less than 250 degrees C. In Advances in Microcrystalline and Nanocrystalline Semiconductors – 1996; Collins, R. W., Fauchet, P. M., Shimizu, I., Vial, J. C., Shimada, T., Alivisatos, A. P., Eds.; MRS Warrendale, 1997; Vol. 452, pp 989–994.
49 Srinivasan, E.; Bordeaux, J. S.; Parsons, G. N. Real-time monitoring of hydrogen elimination processes in pulsed-gas PECVD using in situ mass spectroscopy. In Advances in Microcrystalline and Nanocrystalline Semiconductors – 1996; Collins, R. W., Fauchet, P. M., Shimizu, I., Vial, J. C., Shimada, T., Alivisatos, A. P., Eds.; MRS Warrendale, 1997; Vol. 452, pp 755–760.
48 Smith, L. L.; Srinivasan, E.; Parsons, G. N. Investigation of substrate dependent nucleation of plasma-deposited microcrystalline silicon on glass and silicon substrates using atomic force microscopy. J. Appl. Phys., 1997, 82 (12), 6041–6046 DOI: 10.1063/1.366471.
47 Chowdhury, A. I.; Read, W. W.; Rubloff, G. W.; Tedder, L. L.; Parsons, G. N. Real-time process sensing and metrology in amorphous and selective area silicon plasma enhanced chemical vapor deposition using in situ mass spectrometry. J. Vac. Sci. Technol. B, 1997, 15 (1), 127–132 DOI: 10.1116/1.589237.
1996
46 Tedder, L. L.; Rubloff, G. W.; Cohaghan, B. F.; Parsons, G. N. Dynamic rate and thickness metrology during poly-Si rapid thermal chemical vapor deposition from SiH4 using real time in
situ mass spectrometry. J. Vac. Sci. Technol. A-Vac. Surf. Films, 1996, 14 (2), 267–270 DOI:
10.1116/1.579887.
45 Srinivasan, E.; Yang, H.; Parsons, G. N. Ab initio calculation of hydrogen abstraction energetics from silicon hydrides. J. Chem. Phys., 1996, 105 (13), 5467–5471 DOI: 10.1063/1.472387.
44 Srinivasan, E.; Lloyd, D. A.; Fang, M.; Parsons, G. N. Inert gas dilution and ion bombardment effects in room temperature (35 degrees C) plasma deposition of a-Si:H. In Amorphous Silicon
Technology – 1996; Hack, M., Schiff, E. A., Wagner, S., Schropp, R., Matsuda, A., Eds.; MRS Warrendale, 1996; Vol. 420, pp 399–404.
1994
43 Souk, J.; Parsons, G. Progress in Large Area Selective Silicon Deposition for Tft Lcd Applications. In Amorphous Silicon Technology-1994; Schiff, E. A., Hack, M., Madan, A., Powell, M., Matsuda, A., Eds.; MRS Pittsburgh, 1994; Vol. 336, pp 19–24.
1993
42 Parsons, G.; Boland, J.; Tsang, J. Microstructural Evolution and Substrate Selectivity in Pecvd Mu-C-Si. In Microcrystalline Semiconductors: Materials Science & Devices; Fauchet, P. M., Tsai, C. C., Canham, L. T., Shimizu, I., Aoyagi, Y., Eds.; Materials Research Soc: Pittsburgh, 1993; Vol. 283, pp 495–500.
41 Esser, A.; Heesel, H.; Kurz, H.; Wang, C.; Parsons, G.; Lucovsky, G. Transport-Properties of Optically Generated Free-Carriers in Hydrogenated Amorphous-Silicon in the Femtosecond Time Regime. Phys. Rev. B, 1993, 47 (7), 3593–3597 DOI: 10.1103/PhysRevB.47.3593.
40 Esser, A.; Heesel, H.; Kurz, H.; Wang, C.; Parsons, G.; Lucovsky, G. Femtosecond Spectroscopic Study of Ultrafast Carrier Relaxation in Hydrogenated Amorphous-Silicon a-Si-H. J. Appl. Phys., 1993, 73 (3), 1235–1239 DOI: 10.1063/1.353263.
1992
39 Parsons, G.; Boland, J.; Tsang, J. Selective Deposition and Bond Strain Relaxation in Silicon Pecvd Using Time Modulated Silane Flow. Jpn. J. Appl. Phys. Part 1 – Regul. Pap. Short Notes
Rev. Pap., 1992, 31 (6B), 1943–1947 DOI: 10.1143/JJAP.31.1943.
38 Parsons, G. Enhanced Mobility Top-Gate Amorphous-Silicon Thin-Film Transistor with Selectively Deposited Source Drain Contacts. IEEE Electron Device Lett., 1992, 13 (2), 80–82 DOI: 10.1109/55.144965.
37 Boland, J.; Parsons, G. Bond Selectivity in Silicon Film Growth. Science, 1992, 256 (5061), 1304–1306 DOI: 10.1126/science.256.5061.1304.
1991
36 Souk, J.; Parsons, G.; Batey, J. Composition and Properties of Pecvd Silicon-Nitride Films Deposited from Sih4, N-2, He Gases; Madan, A., Hamakawa, Y., Thompson, M., Taylor, P., Lecomber, P., Eds.; Materials Research Soc: Pittsburgh, 1991; Vol. 219.
35 Parsons, G. Selective Deposition of Silicon by Plasma-Enhanced Chemical Vapor-Deposition Using Pulsed Silane Flow. Appl. Phys. Lett., 1991, 59 (20), 2546–2548 DOI: 10.1063/1.105948.
34 Parsons, G.; Souk, J.; Batey, J. Low Hydrogen Content Stoichiometric Silicon-Nitride Films Deposited by Plasma Enhanced Chemical Vapor-Deposition. J. Appl. Phys., 1991, 70 (3), 1553–1560 DOI: 10.1063/1.349544.
1990
33 Williams, M.; Wang, C.; Lucovsky, G.; Parsons, G. Deposition of Electronic-Grade Amorphous-Silicon – Induced Defect Relaxation; Anastassakis, E. M., Joannopoulos, J. D., Eds.; World Scientific Publ Co Pte Ltd: Singapore, 1990.
32 Wang, C.; Parsons, G.; Buehler, E.; Nemanich, R.; Lucovsky, G. Formation of Microcrystalline Silicon Film by Rms Process; Fauchet, P., Tanaka, K., Tsai, C., Eds.; Materials Research Soc: Pittsburgh, 1990; Vol. 164.
31 Parsons, G.; Wang, C.; Williams, M.; Lucovsky, G. Postdeposition Relaxation of Electronic Defects in Hydrogenated Amorphous-Silicon. Appl. Phys. Lett., 1990, 56 (19), 1895–1897 DOI: 10.1063/1.103056.
30 Parsons, G.; Wang, C.; Lucovsky, G. Annealing of Irreversible Defects in Hydrogenated and Unhydrogenated Amorphous-Silicon Thin-Films; Taylor, P., Thompson, M., Lecomber, P., Hamakaura, Y., Madan, A., Eds.; Materials Research Soc: Pittsburgh, 1990; Vol. 192.
29 Parsons, G.; Wang, C.; Lucovsky, G. Annealing of Intrinsic and Photoinduced Defects in Hydrogenated Amorphous-Silicon. Thin Solid Films, 1990, 193 (1-2), 577–587 DOI: 10.1016/0040-6090(90)90209-V.
28 Parsons, G.; Lucovsky, G. Silicon-Hydrogen Bond-Stretching Vibrations in Hydrogenated Amorphous Silicon-Nitrogen Alloys. Phys. Rev. B, 1990, 41 (3), 1664–1667 DOI: 10.1103/PhysRevB.41.1664.
27 Parsons, G.; Lucovsky, G. Nitrogen Incorporation in a-Si,n-H Alloy-Films Produced by Remote Pecvd; Lucovsky, G., Ibbotson, D., Hess, D., Eds.; Materials Research Soc: Pittsburgh, 1990; Vol. 165.
26 Nemanich, R.; Buehler, E.; Legrice, Y.; Shroder, R.; Parsons, G.; Wang, C.; Lucovsky, G.; Boyce, J. Raman-Scattering from Microcrystalline Films – Considerations of Composite Structures with Different Optical-Absorption Properties; Fauchet, P., Tanaka, K., Tsai, C., Eds.; Materials Research Soc: Pittsburgh, 1990; Vol. 164.
25 Lucovsky, G.; Kim, S.; Tsu, D.; Parsons, G.; Fitch, J. Formation of Silicon-Based Heterostructures in Multichamber Integrated-Processing Thin-Film Deposition Systems. J. Vac.
Sci. Technol. A-Vac. Surf. Films, 1990, 8 (3), 1947–1954 DOI: 10.1116/1.576787.
24 Lucovsky, G.; Kim, S.; Tsu, D.; Parsons, G.; Fitch, J. Formation of Silicon-Based Heterostructures in Multichamber Integrated-Processing Thin-Film Deposition Systems; Freund, R., Ed.; Spie – Int Soc Optical Engineering: Bellingham, 1990; Vol. 1188.
23 Kim, S.; Wang, C.; Parsons, G.; Lucovsky, G. A-Si-H Thin-Film Transistors and Logic-Circuits Fabricated in an Integrated Multichamber System; Taylor, P., Thompson, M., Lecomber, P., Hamakaura, Y., Madan, A., Eds.; Materials Research Soc: Pittsburgh, 1990; Vol. 192.
22 Esser, A.; Seibert, K.; Kurz, H.; Parsons, G.; Wang, C.; Davidson, B.; Lucovsky, G.; Nemanich, R. Ultrafast Recombination and Trapping in Amorphous-Silicon. Phys. Rev. B, 1990, 41 (5), 2879–2884 DOI: 10.1103/PhysRevB.41.2879.
21 Davidson, B.; Parsons, G.; Wang, C.; Lucovsky, G. Polyhydride Bonding Groups in Pecvd Amorphous Si Thin-Films; Lucovsky, G., Ibbotson, D., Hess, D., Eds.; Materials Research Soc: Pittsburgh, 1990; Vol. 165.
1989
20 Wang, C.; Parsons, G.; Lucovsky, G. The Effect of Water-Vapor and Oxygen in the Processing Environment on the Properties of Sputtered a-Si-H Films; Madan, A., Thompson, M., Taylor, P., Hamakawa, Y., Lecomber, P., Eds.; Materials Research Soc: Pittsburgh, 1989; Vol. 149.
19 Wang, C.; Parsons, G.; Lucovsky, G. Effects of Gas Additives on the Properties of a-Si-H Films. J. Non-Cryst. Solids, 1989, 114, 193–195 DOI: 10.1016/0022-3093(89)90110-5.
18 Tsu, D.; Parsons, G.; Lucovsky, G.; Watkins, M. Optical Emission and Mass Spectroscopic Studies of the Gas-Phase During the Deposition of Sio2 and a-Si-H by Remote Plasma-Enhanced Chemical Vapor-Deposition. J. Vac. Sci. Technol. A-Vac. Surf. Films, 1989, 7 (3), 1115–1123 DOI: 10.1116/1.576239.
17 Parsons, G.; Wang, C.; Williams, M.; Lucovsky, G. Reduction of Defects by High-Temperature Annealing (150-Degrees-C-240 Degrees-C) in Hydrogenated Amorphous-Silicon Films Deposited at Room-Temperature. J. Non-Cryst. Solids, 1989, 114, 178–180 DOI: 10.1016/0022-3093(89)90105-1.
16 Parsons, G.; Tsu, D.; Wang, C.; Lucovsky, G. Precursors for the Deposition of Amorphous- Silicon Hydrogen Alloys by Remote Plasma Enhanced Chemical Vapor-Deposition. J. Vac. Sci. Technol. A-Vac. Surf. Films, 1989, 7 (3), 1124–1129 DOI: 10.1116/1.576240.
15 Parsons, G.; Tsu, D.; Lucovsky, G. Defects in a-Si-H Films Produced by Remote Plasma Enhanced Chemical Vapor Deposition. J. Non-Cryst. Solids, 1989, 107 (2-3), 295–300 DOI: 10.1016/0022-3093(89)90475-4.
14 Parsons, G.; Kim, S.; Lucovsky, G. Substrate Interactions in the Formation of Amorphous-Silicon Dielectric Interfaces; Madan, A., Thompson, M., Taylor, P., Hamakawa, Y., Lecomber, P., Eds.; Materials Research Soc: Pittsburgh, 1989; Vol. 149.
13 Nemanich, R.; Buehler, E.; Legrice, Y.; Shroder, R.; Parsons, G.; Wang, C.; Lucovsky, G.; Boyce, J. Raman-Scattering from Microcrystalline Si Films – Considerations of Composite Structures with Different Optical-Absorption Properties. J. Non Cryst. Solids, 1989, 114, 813–815 DOI: 10.1016/0022-3093(89)90729-1.
12 Lucovsky, G.; Parsons, G.; Wang, C.; Davidson, B.; Tsu, D. Low-Temperature Deposition of Hydrogenated Amorphous-Silicon (a-Si-H) – Control of Polyhydride Incorporation and Its Effects on Thin-Film Properties. Solar Cells, 1989, 27 (1-4), 121 136 DOI: 10.1016/0379-6787(89)90022-7.
11 Lucovsky, G.; Davidson, B.; Parsons, G.; Wang, C. Incorporation of Polyhydride Bonding Groups into Thin-Films of Hydrogenated Amorphous-Silicon (a-Si-H). J. Non-Cryst. Solids, 1989, 114, 154–156 DOI: 10.1016/0022-3093(89)90097-5.
10 Kim, S.; Parsons, G.; Fountain, G.; Lucovsky, G. Dependence of a-Si-H/Si3n4 Interface Properties on the Deposition Sequence in Amorphous-Silicon Thin-Film Transistor Produced by Remote Pecvd Process. J. Non-Cryst. Solids, 1989, 115 (1-3), 69–71 DOI: 10.1016/0022-3093(89)90363-3.
9 Esser, A.; Seibert, K.; Kurz, H.; Parsons, G.; Wang, C.; Davidson, B.; Lucovsky, G.; Nemanich, R. Ultrafast Recombination and Trapping in Amorphous-Silicon. J. Non-Cryst. Solids, 1989, 114, 573–575 DOI: 10.1016/0022-3093(89)90654-6.
8 Davidson, B.; Lucovsky, G.; Parsons, G.; Nemanich, R.; Esser, A.; Seibert, K.; Kurz, H. Free Carrier Absorption and the Transient Optical-Properties of Amorphous-Silicon Thin-Films – a Model Including Time-Dependent Free Carrier, and Static and Dispersive Interband Contributions to the Complex Dielectric Constant. J. Non-Cryst. Solids, 1989, 114, 579–581 DOI: 10.1016/0022-3093(89)90656-X.
1988
7 Tsu, D.; Parsons, G.; Lucovsky, G. Spectroscopic Emission Studies of O2/He and N2/He Plasmas in Remote Plasma Enhanced Chemical Vapor-Deposition. J. Vac. Sci. Technol. A-Vac. Surf. Films, 1988, 6 (3), 1849–1854 DOI: 10.1116/1.575267.
6 Parsons, G.; Tsu, D.; Lucovsky, G. Properties of Intrinsic and Doped a-Si-H Deposited by Remote Plasma Enhanced Chemical Vapor-Deposition. J. Vac. Sci. Technol. A-Vac. Surf. Films, 1988, 6 (3), 1912–1916 DOI: 10.1116/1.575244.
1987
5 Parsons, G.; Tsu, D.; Lucovsky, G. Optical and Electrical-Properties of a-Si-H Films Grown by Remote Plasma Enhanced Chemical Vapor-Deposition (rpecvd). J. Non-Cryst. Solids, 1987, 97-8, 1375–1378 DOI: 10.1016/0022-3093(87)90329-2.
4 Parsons, G.; Kusano, C.; Lucovsky, G. Photoelectronic Properties of a-Si=h and a-Ge=h Thin- Films in Surface Cell Structures. J. Vac. Sci. Technol. A-Vac. Surf. Films, 1987, 5 (4), 1655–1660 DOI: 10.1116/1.574541.
3 Cook, J.; Parsons, G.; Kusano, C.; Lucovsky, G. Bonding Defects in Amorphous-Silicon Alloys. Solar Cells, 1987, 21, 387 397 DOI: 10.1016/0379-6787(87)90137-2.
1986
2 Parsons, G.; Cook, J.; Lucovsky, G.; Lin, S.; Mantini, M. Deposition of Alpha-Si,Sn H Alloy-Films by Reactive Magnetron Sputtering from Separate Si and Sn Targets. J. Vac. Sci. Technol. A-Vac. Surf. Films, 1986, 4 (3), 470–474 DOI: 10.1116/1.573910.
1985
1 Rudder, R.; Parsons, G.; Cook, J.; Lucovsky, G. Low Defect Density a-Si,Ge-H Alloy-Films Produced by Magnetron Sputtering from Separate Si and Ge Cathodes. J. Non-Cryst. Solids, 1985, 77-8, 885–888 DOI: 10.1016/0022-3093(85)90802-6.