2010 and Earlier

 

2017
2016
2015
2014
2013
2012 2011 2010 and Earlier

2010 and Earlier

125      Spagnola, J. C.; Gong, B.; Parsons, G. N. Surface texture and wetting stability of polydimethylsiloxane coated with aluminum oxide at low temperature by atomic layer deposition. J. Vac. Sci. Technol. A 2010, 28 (6), 1330–1337 DOI: 10.1116/1.3488604.

124      Spagnola, J. C.; Gong, B.; Arvidson, S. A.; Jur, J. S.; Khan, S. A.; Parsons, G. N. Surface and sub-surface reactions during low temperature aluminium oxide atomic layer deposition on fiber-forming polymers. J. Mater. Chem. 2010, 20 (20), 4213–4222 DOI: 10.1039/c0jm00355g.

123      Scarel, G.; Na, J.-S.; Parsons, G. N. Angular behavior of the Berreman effect investigated in uniform Al2O3 layers formed by atomic layer deposition. J. Phys.-Condes. Matter 2010, 22 (15), 155401 DOI: 10.1088/0953-8984/22/15/155401.

122      Scarel, G.; Na, J.-S.; Gong, B.; Parsons, G. N. Phonon Response in the Infrared Region to Thickness of Oxide Films Formed by Atomic Layer Deposition. Appl. Spectrosc. 2010, 64 (1), 120–126.

121      Oldham, C. J.; Gong, B.; Spagnola, J. C.; Jur, J. S.; Senecal, K. J.; Godfrey, T. A.; Parsons, G. N. Atomic Layer Deposition on Polymers: Applications to Physical Encapsulation of Electrospun Nylon Nanofibers. In Atomic Layer Deposition Applications 6; Elam, J. W., DeGendt, S., VanDerStraten, O., Delabie, A., Londergan, A., Bent, S. F., Roozeboom, F., Eds.; Electrochemical Soc Inc: Pennington, 2010; Vol. 33, pp 279–290.

120      Na, J.-S.; Scarel, G.; Parsons, G. N. In Situ Analysis of Dopant Incorporation, Activation, and Film Growth during Thin Film ZnO and ZnO:Al Atomic Layer Deposition. J. Phys. Chem. C 2010, 114 (1), 383–388 DOI: 10.1021/jp908332q.

119      Jur, J. S.; Spagnola, J. C.; Lee, K.; Gong, B.; Peng, Q.; Parsons, G. N. Temperature-Dependent Subsurface Growth during Atomic Layer Deposition on Polypropylene and Cellulose Fibers. Langmuir 2010, 26 (11), 8239–8244 DOI: 10.1021/la904604z.

118      Hyde, G. K.; Scarel, G.; Spagnola, J. C.; Peng, Q.; Lee, K.; Gong, B.; Roberts, K. G.; Roth, K. M.; Hanson, C. A.; Devine, C. K.; Stewart, S. M.; Hojo, D.; Na, J.-S.; Jur, J. S.; Parsons, G. N. Atomic Layer Deposition and Abrupt Wetting Transitions on Nonwoven Polypropylene and Woven Cotton Fabrics. Langmuir 2010, 26 (4), 2550–2558 DOI: 10.1021/la902830d.

117      Gittard, S. D.; Hojo, D.; Hyde, G. K.; Scarel, G.; Narayan, R. J.; Parsons, G. N. Antifungal Textiles Formed Using Silver Deposition in Supercritical Carbon Dioxide. J. Mater. Eng. Perform. 2010, 19 (3), 368–373 DOI: 10.1007/s11665-009-9514-7.

116      Peng, Q.; Sun, X.-Y.; Spagnola, J. C.; Saquing, C.; Khan, S. A.; Spontak, R. J.; Parsons, G. N. Bi-directional Kirkendall Effect in Coaxial Microtuble Nanolaminate Assemblies Fabricated by Atomic Layer Deposition. ACS Nano 2009, 3 (3), 546–554 DOI: 10.1021/nn8006543.

115      Peng, Q.; Gong, B.; VanGundy, R. M.; Parsons, G. N. “Zincone” Zinc Oxide-Organic Hybrid Polymer Thin Films Formed by Molecular Layer Deposition. Chem. Mat. 2009, 21 (5), 820–830 DOI: 10.1021/cm8020403.

114      Na, J.-S.; Peng, Q.; Scarel, G.; Parsons, G. N. Role of Gas Doping Sequence in Surface Reactions and Dopant Incorporation during Atomic Layer Deposition of Al-Doped ZnO. Chem. Mat. 2009, 21 (23), 5585–5593 DOI: 10.1021/cm901404p.

113      Na, J.-S.; Gong, B.; Scarel, G.; Parsons, G. N. Surface Polarity Shielding and Hierarchical ZnO Nano-Architectures Produced Using Sequential Hydrothermal Crystal Synthesis and Thin Film Atomic Layer Deposition. ACS Nano 2009, 3 (10), 3191–3199 DOI: 10.1021/nn900702e.

112      Hyde, G. K.; McCullen, S. D.; Jeon, S.; Stewart, S. M.; Jeon, H.; Loboa, E. G.; Parsons, G. N. Atomic layer deposition and biocompatibility of titanium nitride nano-coatings on cellulose fiber substrates. Biomed. Mater. 2009, 4 (2), 025001 DOI: 10.1088/1748-6041/4/2/025001.

111      Scarel, G.; Hyde, G. K.; Hojo, D.; Parsons, G. N. Berreman effect in infrared absorption spectroscopy of ionic oxide coatings formed by atomic layer deposition on three-dimensional structures. J. Appl. Phys. 2008, 104 (9), 094314 DOI: 10.1063/1.3013439.

110      Peng, Q.; Spagnola, J. C.; Parsons, G. N. Self-catalyzed hydrogenolysis of nickelocene: Functional metal coating of three-dimensional nanosystems at low temperature. J. Electrochem. Soc. 2008, 155 (9), D580–D582 DOI: 10.1149/1.2946723.

109      Peng, Q.; Spagnola, J. C.; Daisuke, H.; Park, K. J.; Parsons, G. N. Conformal metal oxide coatings on nanotubes by direct low temperature metal-organic pyrolysis in supercritical carbon dioxide. J. Vac. Sci. Technol. B 2008, 26 (3), 978–982 DOI: 10.1116/1.2917072.

108      Peng, Q.; Hojo, D.; Park, K. J.; Parsons, G. N. Low temperature metal oxide film deposition and reaction kinetics in supercritical carbon dioxide. Thin Solid Films 2008, 516 (15), 4997–5003 DOI: 10.1016/j.tsf.2007.10.057.

107      Na, J.-S.; Ayres, J. A.; Chandra, K. L.; Gorman, C. B.; Parsons, G. N. Nanoencapsulation and Stabilization of Single-Molecule/Particle Electronic Nanoassemblies Using Low-Temperature Atomic Layer Deposition. J. Phys. Chem. C 2008, 112 (51), 20510–20517 DOI: 10.1021/jp8066298.

106      Peng, Q.; Sun, X.-Y.; Spagnola, J. C.; Hyde, G. K.; Spontak, R. J.; Parsons, G. N. Atomic layer deposition on electrospun polymer fibers as a direct route to Al2O3 microtubes with precise wall thickness control. Nano Lett. 2007, 7 (3), 719–722 DOI: 10.1021/nl062948i.

105      Park, K. J.; Terry, D. B.; Stewart, S. M.; Parsons, G. N. In situ Auger electron spectroscopy study of atomic layer deposition: Growth initiation and interface formation reactions during ruthenium ALD on Si-H, SiO2, and HfO2 surfaces. Langmuir 2007, 23 (11), 6106–6112 DOI: 10.1021/la061898u.

104      Na, J.-S.; Ayres, J.; Chandra, K. L.; Gorman, C. B.; Parsons, G. N. Real-time conductivity analysis through single-molecule electrical junctions. Nanotechnology 2007, 18 (42), 424001 DOI: 10.1088/0957-4484/18/42/424001.

103      Na, J.-S.; Ayres, J.; Chandra, K. L.; Chu, C.; Gorman, C. B.; Parsons, G. N. Conduction mechanisms and stability of single molecule nanoparticle/molecule/nanoparticle junctions. Nanotechnology 2007, 18 (3), 035203 DOI: 10.1088/0957-4484/18/3/035203.

102      Hyde, G. K.; Park, K. J.; Stewart, S. M.; Hinestroza, J. P.; Parsons, G. N. Atomic layer deposition of Conformal inorganic nanoscale coatings on three-dimensional natural fiber systems: Effect of surface topology on film growth characteristics. Langmuir 2007, 23 (19), 9844–9849 DOI: 10.1021/la701449t.

101      Chu, C.; Na, J.-S.; Parsons, G. N. Conductivity in alkylamine/gold and alkanethiol/gold molecular junctions measured in molecule/nanoparticle/molecule bridges and conducting probe structures. J. Am. Chem. Soc. 2007, 129 (8), 2287–2296 DOI: 10.1021/ja064968s.

100      Chu, C.; Ayres, J. A.; Stefanescu, D. M.; Walker, B. R.; Gorman, C. B.; Parsons, G. N. Enhanced conduction through isocyanide terminal groups in alkane and biphenylene molecules measured in molecule/nanoparticle/molecule junctions. J. Phys. Chem. C 2007, 111 (22), 8080–8085 DOI: 10.1021/jp065377r.

99        Park, K. J.; Parsons, G. N. Selective area atomic layer deposition of rhodium and effective work function characterization in capacitor structures. Appl. Phys. Lett. 2006, 89 (4), 043111 DOI: 10.1063/1.2234846.

98        Gougousi, T.; Terry, D. B.; Parsons, G. N. Charge generation during oxidation of thin Hf metal films on silicon. Thin Solid Films 2006, 513 (1-2), 201–205 DOI: 10.1016/j.tsf.2006.02.004.

97        Chu, C.; Parsons, G. N. Solvent enhanced resist flow for room temperature imprint lithography. J. Vac. Sci. Technol. B 2006, 24 (2), 818–822 DOI: 10.1116/1.2180258.

96        Barua, D.; Gougousi, T.; Young, E. D.; Parsons, G. N. Supercritical-carbon dioxide-assisted cyclic deposition of metal oxide and metal thin films. Appl. Phys. Lett. 2006, 88 (9), 092904 DOI: 10.1063/1.218165.

95        Sivasubramani, P.; Zhao, P.; Kim, M. J.; Gnade, B. E.; Wallace, R. M.; Edge, L. F.; Schlom, D. G.; Parsons, G. N.; Misra, V. Thermal stability studies of advanced gate stack structures on Si (100). In Characterization and Metrology for ULSI Technology 2005; Seiler, D. G., Diebold, A. C., McDonald, R., Ayre, C. R., Khosla, R. P., Secula, E. M., Eds.; Amer Inst Physics: Melville, 2005; Vol. 788, pp 156–160.

94        Park, K. J.; Doub, J. M.; Gougousi, T.; Parsons, G. N. Microcontact patterning of ruthenium gate electrodes by selective area atomic layer deposition. Appl. Phys. Lett. 2005, 86 (5), 051903 DOI: 10.1063/1.1852079.

93        Kelly, M. J.; Han, J. H.; Musgrave, C. B.; Parsons, G. N. In-situ infrared spectroscopy and density functional theory modeling of hafnium alkylamine adsorption on Si-OH and Si-H surfaces. Chem. Mat. 2005, 17 (21), 5305–5314 DOI: 10.1021/cm051064h.

92        Gougousi, T.; Barua, D.; Young, E. D.; Parsons, G. N. Metal oxide thin films deposited from metal organic precursors in supercritical CO2 solutions. Chem. Mat. 2005, 17 (20), 5093–5100 DOI: 10.1021/cm0510965.

91        Park, K. J.; Parsons, G. N. Bulk and interface charge in low temperature silicon nitride for thin film transistors on plastic substrates. J. Vac. Sci. Technol. A 2004, 22 (6), 2256–2260 DOI: 10.1116/1.1795822.

90        Niu, D.; Ashcraft, R. W.; Hinkle, C.; Parsons, G. N. Effect of N-2 plasma on yttrium oxide and yttrium-oxynitride dielectrics. J. Vac. Sci. Technol. A 2004, 22 (3), 445–451 DOI: 10.1116/1.1666880.

89        Gougousi, T.; Parsons, G. N. Postdeposition reactivity of sputter-deposited high-dielectric-constant films with ambient H2O and carbon-containing species. J. Appl. Phys. 2004, 95 (3), 1391–1396 DOI: 10.1063/1.1636513.

88        Ulrich, M. D.; Rowe, J. E.; Niu, D.; Parsons, G. N. Bonding and structure of ultrathin yttrium oxide films for Si field effect transistor gate dielectric applications. J. Vac. Sci. Technol. B 2003, 21 (4), 1792–1797 DOI: 10.1116/1.1593647.

87        Niu, D.; Ashcraft, R. W.; Chen, Z.; Stemmer, S.; Parsons, G. N. Chemical, physical, and electrical characterizations of oxygen plasma assisted chemical vapor deposited yttrium oxide on silicon. J. Electrochem. Soc. 2003, 150 (5), F102–F109 DOI: 10.1149/1.1566415.

86        Gougousi, T.; Niu, D.; Ashcraft, R. W.; Parsons, G. N. Carbonate formation during post-deposition ambient exposure of high-k dielectrics. Appl. Phys. Lett. 2003, 83 (17), 3543–3545 DOI: 10.1063/1.1623316.

85        Gougousi, T.; Kelly, M. J.; Terry, D. B.; Parsons, G. N. Properties of La-silicate high-K dielectric films formed by oxidation of La on silicon. J. Appl. Phys. 2003, 93 (3), 1691–1696 DOI: 10.1063/1.1531818.

84        Gougousi, T.; Kelly, M. J.; Parsons, G. N. Kinetics of charge generation during formation of Hf and Zr silicate dielectrics. In Comos Front-End Materials and Process Technology; King, T. J., Yu, B., Lander, R. J. P., Saito, S., Eds.; Materials Research Society: Warrendale, 2003; Vol. 765, pp 79–84.

83        Stemmer, S.; Klenov, D. O.; Chen, Z. Q.; Niu, D.; Ashcraft, R. W.; Parsons, G. N. Reactions of Y2O3 films with (001) Si substrates and with polycrystalline Si capping layers. Appl. Phys. Lett. 2002, 81 (4), 712–714 DOI: 10.1063/1.1496500.

82        Niu, D.; Ashcraft, R. W.; Stemmer, S.; Parsons, G. N. Interface reactions during oxygen plasma assisted chemical vapor deposition of yttrium oxide on silicon; Huff, H. R., Fabry, L., Kishino, S., Eds.; Electrochemical Society Inc: Pennington, 2002; Vol. 2002.

81        Niu, D.; Ashcraft, R. W.; Parsons, G. N. Water absorption and interface reactivity of yttrium oxide gate dielectrics on silicon. Appl. Phys. Lett. 2002, 80 (19), 3575–3577 DOI: 10.1063/1.1477268.

80        Niu, D.; Ashcraft, R. W.; Kelly, M. J.; Chambers, J. J.; Klein, T. M.; Parsons, G. N. Elementary reaction schemes for physical and chemical vapor deposition of transition metal oxides on silicon for high-k gate dielectric applications. J. Appl. Phys. 2002, 91 (9), 6173–6180 DOI: 10.1063/1.1468253.

79        Niu, D.; Ashcraft, R. W.; Chen, Z.; Stemmer, S.; Parsons, G. N. Electron energy-loss spectroscopy analysis of interface structure of yttrium oxide gate dielectrics on silicon. Appl. Phys. Lett. 2002, 81 (4), 676–678 DOI: 10.1063/1.1496138.

78        Misra, V.; Lucovsky, G.; Parsons, G. N. Issues in high-kappa gate stack interfaces. MRS Bull. 2002, 27 (3), 212–216 DOI: 10.1557/mrs2002.73.

77        Gupta, A.; Yang, H.; Parsons, G. N. Ab initio analysis of silyl precursor physisorption and hydrogen abstraction during low temperature silicon deposition. Surf. Sci. 2002, 496 (3), 307–317 DOI: 10.1016/S0039-6028(01)01467-4.

76        Gougousi, T.; Kelly, M. J.; Parsons, G. N. The role of the OH species in high-k/polycrystalline silicon gate electrode interface reactions. Appl. Phys. Lett. 2002, 80 (23), 4419–4421 DOI: 10.1063/1.1485122.

75        Bray, K. R.; Parsons, G. N. Surface transport kinetics in low-temperature silicon deposition determined from topography evolution. Phys. Rev. B 2002, 65 (3), 035311 DOI: 10.1103/PhysRevB.65.035311.

74        Bray, K. R.; Gupta, A.; Parsons, G. N. Effect of hydrogen on adsorbed precursor diffusion kinetics during hydrogenated amorphous silicon deposition. Appl. Phys. Lett. 2002, 80 (13), 2356–2358 DOI: 10.1063/1.1467616.

73        Chambers, J. J.; Parsons, G. N. Physical and electrical characterization of ultrathin yttrium silicate insulators on silicon. J. Appl. Phys. 2001, 90 (2), 918–933 DOI: 10.1063/1.1375018.

72        Chambers, J. J.; Busch, B. W.; Schulte, W. H.; Gustafsson, T.; Garfunkel, E.; Wang, S.; Maher, D. M.; Klein, T. M.; Parsons, G. N. Effects of surface pretreatments on interface structure during formation of ultra-thin yttrium silicate dielectric films on silicon. Appl. Surf. Sci. 2001, 181 (1-2), 78–93 DOI: 10.1016/S0169-4332(01)00373-7.

71        Parsons, G. N. Surface reactions in very low temperature (< 150 degrees C) hydrogenated amorphous silicon deposition, and applications to thin film transistors. J. Non-Cryst. Solids 2000, 266, 23–30 DOI: 10.1016/S0022-3093(99)00713-9.

70        Yang, C. S.; Smith, L. L.; Arthur, C. B.; Parsons, G. N. Stability of low-temperature amorphous silicon thin film transistors formed on glass and transparent plastic substrates. J. Vac. Sci. Technol. B 2000, 18 (2), 683–689 DOI: 10.1116/1.591259.

69        Gupta, A.; Parsons, G. N. Bond strain, chemical induction, and OH incorporation in low-temperature (350-100 degrees C) plasma deposited silicon dioxide films. J. Vac. Sci. Technol. B 2000, 18 (3), 1764–1769 DOI: 10.1116/1.591468.

68        Chambers, J. J.; Parsons, G. N. Yttrium silicate formation on silicon: Effect of silicon preoxidation and nitridation on interface reaction kinetics. Appl. Phys. Lett. 2000, 77 (15), 2385–2387 DOI: 10.1063/1.1316073.

67        Klein, T. M.; Niu, D.; Epling, W. S.; Li, W.; Maher, D. M.; Hobbs, C. C.; Hegde, R. I.; Baumvol, I. J. R.; Parsons, G. N. Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al2O3 thin films on Si(100). Appl. Phys. Lett. 1999, 75 (25), 4001–4003 DOI: 10.1063/1.125519.

66        Klein, T. M.; Anderson, T. M.; Chowdhury, A. I.; Parsons, G. N. Hydrogenated silicon nitride thin films deposited between 50 and 250 degrees C using nitrogen/silane mixtures with helium dilution. J. Vac. Sci. Technol. A-Vac. Surf. Films 1999, 17 (1), 108–112 DOI: 10.1116/1.582104.

65        Yang, C. S.; Read, W. W.; Arthur, C.; Srinivasan, E.; Parsons, G. N. Self-aligned gate and source drain contacts in inverted-staggered a-Si : H thin-film transistors fabricated using selective area silicon PECVD. IEEE Electron Device Lett. 1998, 19 (6), 180–182 DOI: 10.1109/55.678536.

64        Srinivasan, E.; Parsons, G. N. Hydrogen abstraction kinetics and crystallization in low temperature plasma deposition of silicon. Appl. Phys. Lett. 1998, 72 (4), 456–458 DOI: 10.1063/1.120785.

63        Smith, L. L.; Read, W. W.; Yang, C. S.; Srinivasan, E.; Courtney, C. H.; Lamb, H. H.; Parsons, G. N. Plasma enhanced selective area microcrystalline silicon deposition on hydrogenated amorphous silicon: Surface modification for controlled nucleation. J. Vac. Sci. Technol. A-Vac. Surf. Films 1998, 16 (3), 1316–1320 DOI: 10.1116/1.581144.

62        Smith, L. L.; Arthur, C. B.; Yang, C. S.; Parsons, G. N. Substrate surface morphology and growth evolution of low temperature silicon nitride on transparent plastics. In Flat-Panel Display Materials-1998; Parsons, G. N., Tsai, C. C., Fahlen, T. S., Seager, C. H., Eds.; Materials Research Society: Warrendale, 1998; Vol. 508, pp 133–138.

61        Parsons, G. N.; Yang, C. S.; Klein, T. M.; Smith, L. Reaction processes for low temperature (< 150 degrees C) plasma enhanced deposition of hydrogenated amorphous silicon thin film transistors on transparent plastic substrates. In Flat-Panel Display Materials-1998; Parsons, G. N., Tsai, C. C., Fahlen, T. S., Seager, C. H., Eds.; Materials Research Society: Warrendale, 1998; Vol. 508, pp 19–24.

60        Min, K.; Chambers, J. J.; Parsons, G. N.; Hauser, J. R. Monitoring of sidewall spacer etch by optical emission spectroscopy and mass spectroscopy. In In Situ Process Diagnostics and Intelligent Materials Processing; Rosenthal, P. A., Duncan, W. M., Woollam, J. A., Eds.; Materials Research Society: Warrendale, 1998; Vol. 502, pp 157–162.

59        Chowdhury, A. I.; Klein, T. M.; Parsons, G. N. In-situ real-time mass spectroscopic sensing and mass balance modeling of selective area silicon PECVD. In Characterization and Metrology for Ulsi Technology; Seiler, D. G., Diebold, A. C., Bullis, W. M., Shaffner, T. J., McDonald, R., Walters, E. J., Eds.; Amer Inst Physics: Melville, 1998; Vol. 449, pp 363–367.

58        Chowdhury, A. I.; Klein, T. M.; Anderson, T. M.; Parsons, G. N. Silane consumption and conversion analysis in amorphous silicon and silicon nitride plasma deposition using in situ mass spectroscopy. J. Vac. Sci. Technol. A-Vac. Surf. Films 1998, 16 (3), 1852–1856 DOI: 10.1116/1.581117.

57        Chambers, J. J.; Min, K.; Parsons, G. N. Endpoint uniformity sensing and analysis in silicon dioxide plasma etching using in situ mass spectrometry. J. Vac. Sci. Technol. B 1998, 16 (6), 2996–3002 DOI: 10.1116/1.590332.

56        Chambers, J. J.; Min, K.; Hauser, J. R.; Parsons, G. N. Material balance modeling of end-point uniformity in silicon dioxide plasma etching. In In Situ Process Diagnostics and Intelligent Materials Processing; Rosenthal, P. A., Duncan, W. M., Woollam, J. A., Eds.; Materials Research Society: Warrendale, 1998; Vol. 502, pp 41–46.

55        Yang, C. S.; Read, W. W.; Arthur, C. B.; Parsons, G. N. Comparison of conventional and self-aligned a-Si:H thin film transistors. In Flat Panel Display Materials Iii; Fulks, R. T., Parsons, G. N., Slobodin, D. E., Yuzuriha, T. H., Eds.; Materials Research Society: Warrendale, 1997; Vol. 471, pp 179–184.

54        Srinivasan, E.; Parsons, G. N. Real-time kinetic analysis of hydrogen abstraction and etching reactions using pulsed-gas PECVD of amorphous and microcrystalline silicon. In Amorphous and Microcrystalline Silicon Technology – 1997; Wagner, S., Hack, M., Schiff, E. A., Schropp, R., Shimizu, I., Eds.; Materials Research Society: Warrendale, 1997; Vol. 467, pp 501–506.

53        Srinivasan, E.; Parsons, G. N. Hydrogen elimination and phase transitions in pulsed-gas plasma deposition of amorphous and microcrystalline silicon. J. Appl. Phys. 1997, 81 (6), 2847–2855 DOI: 10.1063/1.364309.

52        Srinivasan, E.; Lloyd, D. A.; Parsons, G. N. Dominant monohydride bonding in hydrogenated amorphous silicon thin films formed by plasma enhanced chemical vapor deposition at room temperature. J. Vac. Sci. Technol. A-Vac. Surf. Films 1997, 15 (1), 77–84 DOI: 10.1116/1.580480.

51        Srinivasan, E.; Ellis, S. J.; Nemanich, R. J.; Parsons, G. N. Large crystallite polysilicon deposited using pulsed-gas PECVD at temperatures less than 250 degrees C. In Advances in Microcrystalline and Nanocrystalline Semiconductors – 1996; Collins, R. W., Fauchet, P. M., Shimizu, I., Vial, J. C., Shimada, T., Alivisatos, A. P., Eds.; Materials Research Society: Warrendale, 1997; Vol. 452, pp 989–994.

50        Srinivasan, E.; Bordeaux, J. S.; Parsons, G. N. Real-time monitoring of hydrogen elimination processes in pulsed-gas PECVD using in situ mass spectroscopy. In Advances in Microcrystalline and Nanocrystalline Semiconductors – 1996; Collins, R. W., Fauchet, P. M., Shimizu, I., Vial, J. C., Shimada, T., Alivisatos, A. P., Eds.; Materials Research Society: Warrendale, 1997; Vol. 452, pp 755–760.

49        Smith, L. L.; Srinivasan, E.; Parsons, G. N. Investigation of substrate dependent nucleation of plasma-deposited microcrystalline silicon on glass and silicon substrates using atomic force microscopy. J. Appl. Phys. 1997, 82 (12), 6041–6046 DOI: 10.1063/1.366471.

48        Chowdhury, A. I.; Read, W. W.; Rubloff, G. W.; Tedder, L. L.; Parsons, G. N. Real-time process sensing and metrology in amorphous and selective area silicon plasma enhanced chemical vapor deposition using in situ mass spectrometry. J. Vac. Sci. Technol. B 1997, 15 (1), 127–132 DOI: 10.1116/1.589237.

47        Tedder, L. L.; Rubloff, G. W.; Conaghan, B. F.; Parsons, G. N. Dynamic rate and thickness metrology during poly-Si rapid thermal chemical vapor deposition from SiH4 using real time in situ mass spectrometry (vol 14, pg 267, 1996). J. Vac. Sci. Technol. A-Vac. Surf. Films 1996, 14 (4), 2680–2680 DOI: 10.1116/1.580187.

46        Tedder, L. L.; Rubloff, G. W.; Cohaghan, B. F.; Parsons, G. N. Dynamic rate and thickness metrology during poly-Si rapid thermal chemical vapor deposition from SiH4 using real time in situ mass spectrometry. J. Vac. Sci. Technol. A-Vac. Surf. Films 1996, 14 (2), 267–270 DOI: 10.1116/1.579887.

45        Srinivasan, E.; Yang, H.; Parsons, G. N. Ab initio calculation of hydrogen abstraction energetics from silicon hydrides. J. Chem. Phys. 1996, 105 (13), 5467–5471 DOI: 10.1063/1.472387.

44        Srinivasan, E.; Lloyd, D. A.; Fang, M.; Parsons, G. N. Inert gas dilution and ion bombardment effects in room temperature (35 degrees C) plasma deposition of a-Si:H. In Amorphous Silicon Technology – 1996; Hack, M., Schiff, E. A., Wagner, S., Schropp, R., Matsuda, A., Eds.; Materials Research Society: Warrendale, 1996; Vol. 420, pp 399–404.

43        Souk, J.; Parsons, G. Progress in Large Area Selective Silicon Deposition for Tft Lcd Applications. In Amorphous Silicon Technology-1994; Schiff, E. A., Hack, M., Madan, A., Powell, M., Matsuda, A., Eds.; Materials Research Soc: Pittsburgh, 1994; Vol. 336, pp 19–24.

42        Parsons, G.; Boland, J.; Tsang, J. Microstructural Evolution and Substrate Selectivity in Pecvd Mu-C-Si. In Microcrystalline Semiconductors: Materials Science & Devices; Fauchet, P. M., Tsai, C. C., Canham, L. T., Shimizu, I., Aoyagi, Y., Eds.; Materials Research Soc: Pittsburgh, 1993; Vol. 283, pp 495–500.

41        Esser, A.; Heesel, H.; Kurz, H.; Wang, C.; Parsons, G.; Lucovsky, G. Transport-Properties of Optically Generated Free-Carriers in Hydrogenated Amorphous-Silicon in the Femtosecond Time Regime. Phys. Rev. B 1993, 47 (7), 3593–3597 DOI: 10.1103/PhysRevB.47.3593.

40        Esser, A.; Heesel, H.; Kurz, H.; Wang, C.; Parsons, G.; Lucovsky, G. Femtosecond Spectroscopic Study of Ultrafast Carrier Relaxation in Hydrogenated Amorphous-Silicon a-Si-H. J. Appl. Phys. 1993, 73 (3), 1235–1239 DOI: 10.1063/1.353263.

39        Parsons, G.; Boland, J.; Tsang, J. Selective Deposition and Bond Strain Relaxation in Silicon Pecvd Using Time Modulated Silane Flow. Jpn. J. Appl. Phys. Part 1 – Regul. Pap. Short Notes Rev. Pap. 1992, 31 (6B), 1943–1947 DOI: 10.1143/JJAP.31.1943.

38        Parsons, G. Enhanced Mobility Top-Gate Amorphous-Silicon Thin-Film Transistor with Selectively Deposited Source Drain Contacts. IEEE Electron Device Lett. 1992, 13 (2), 80–82 DOI: 10.1109/55.144965.

37        Boland, J.; Parsons, G. Bond Selectivity in Silicon Film Growth. Science 1992, 256 (5061), 1304–1306 DOI: 10.1126/science.256.5061.1304.

36        Souk, J.; Parsons, G.; Batey, J. Composition and Properties of Pecvd Silicon-Nitride Films Deposited from Sih4, N-2, He Gases; Madan, A., Hamakawa, Y., Thompson, M., Taylor, P., Lecomber, P., Eds.; Materials Research Soc: Pittsburgh, 1991; Vol. 219.

35        Parsons, G. Selective Deposition of Silicon by Plasma-Enhanced Chemical Vapor-Deposition Using Pulsed Silane Flow. Appl. Phys. Lett. 1991, 59 (20), 2546–2548 DOI: 10.1063/1.105948.

34        Parsons, G.; Souk, J.; Batey, J. Low Hydrogen Content Stoichiometric Silicon-Nitride Films Deposited by Plasma-Enhanced Chemical Vapor-Deposition. J. Appl. Phys. 1991, 70 (3), 1553–1560 DOI: 10.1063/1.349544.

33        Williams, M.; Wang, C.; Lucovsky, G.; Parsons, G. Deposition of Electronic-Grade Amorphous-Silicon – Induced Defect Relaxation; Anastassakis, E. M., Joannopoulos, J. D., Eds.; World Scientific Publ Co Pte Ltd: Singapore, 1990.

32        Wang, C.; Parsons, G.; Buehler, E.; Nemanich, R.; Lucovsky, G. Formation of Microcrystalline Silicon Film by Rms Process; Fauchet, P., Tanaka, K., Tsai, C., Eds.; Materials Research Soc: Pittsburgh, 1990; Vol. 164.

31        Parsons, G.; Wang, C.; Williams, M.; Lucovsky, G. Postdeposition Relaxation of Electronic Defects in Hydrogenated Amorphous-Silicon. Appl. Phys. Lett. 1990, 56 (19), 1895–1897 DOI: 10.1063/1.103056.

30        Parsons, G.; Wang, C.; Lucovsky, G. Annealing of Irreversible Defects in Hydrogenated and Unhydrogenated Amorphous-Silicon Thin-Films; Taylor, P., Thompson, M., Lecomber, P., Hamakaura, Y., Madan, A., Eds.; Materials Research Soc: Pittsburgh, 1990; Vol. 192.

29        Parsons, G.; Wang, C.; Lucovsky, G. Annealing of Intrinsic and Photoinduced Defects in Hydrogenated Amorphous-Silicon. Thin Solid Films 1990, 193 (1-2), 577–587 DOI: 10.1016/0040-6090(90)90209-V.

28        Parsons, G.; Lucovsky, G. Silicon-Hydrogen Bond-Stretching Vibrations in Hydrogenated Amorphous Silicon-Nitrogen Alloys. Phys. Rev. B 1990, 41 (3), 1664–1667 DOI: 10.1103/PhysRevB.41.1664.

27        Parsons, G.; Lucovsky, G. Nitrogen Incorporation in a-Si,n-H Alloy-Films Produced by Remote Pecvd; Lucovsky, G., Ibbotson, D., Hess, D., Eds.; Materials Research Soc: Pittsburgh, 1990; Vol. 165.

26        Nemanich, R.; Buehler, E.; Legrice, Y.; Shroder, R.; Parsons, G.; Wang, C.; Lucovsky, G.; Boyce, J. Raman-Scattering from Microcrystalline Films – Considerations of Composite Structures with Different Optical-Absorption Properties; Fauchet, P., Tanaka, K., Tsai, C., Eds.; Materials Research Soc: Pittsburgh, 1990; Vol. 164.

25        Lucovsky, G.; Kim, S.; Tsu, D.; Parsons, G.; Fitch, J. Formation of Silicon-Based Heterostructures in Multichamber Integrated-Processing Thin-Film Deposition Systems. J. Vac. Sci. Technol. A-Vac. Surf. Films 1990, 8 (3), 1947–1954 DOI: 10.1116/1.576787.

24        Lucovsky, G.; Kim, S.; Tsu, D.; Parsons, G.; Fitch, J. Formation of Silicon-Based Heterostructures in Multichamber Integrated-Processing Thin-Film Deposition Systems; Freund, R., Ed.; Spie – Int Soc Optical Engineering: Bellingham, 1990; Vol. 1188.

23        Kim, S.; Wang, C.; Parsons, G.; Lucovsky, G. A-Si-H Thin-Film Transistors and Logic-Circuits Fabricated in an Integrated Multichamber System; Taylor, P., Thompson, M., Lecomber, P., Hamakaura, Y., Madan, A., Eds.; Materials Research Soc: Pittsburgh, 1990; Vol. 192.

22        Esser, A.; Seibert, K.; Kurz, H.; Parsons, G.; Wang, C.; Davidson, B.; Lucovsky, G.; Nemanich, R. Ultrafast Recombination and Trapping in Amorphous-Silicon. Phys. Rev. B 1990, 41 (5), 2879–2884 DOI: 10.1103/PhysRevB.41.2879.

21        Davidson, B.; Parsons, G.; Wang, C.; Lucovsky, G. Polyhydride Bonding Groups in Pecvd Amorphous Si Thin-Films; Lucovsky, G., Ibbotson, D., Hess, D., Eds.; Materials Research Soc: Pittsburgh, 1990; Vol. 165.

20        Wang, C.; Parsons, G.; Lucovsky, G. The Effect of Water-Vapor and Oxygen in the Processing Environment on the Properties of Sputtered a-Si-H Films; Madan, A., Thompson, M., Taylor, P., Hamakawa, Y., Lecomber, P., Eds.; Materials Research Soc: Pittsburgh, 1989; Vol. 149.

19        Wang, C.; Parsons, G.; Lucovsky, G. Effects of Gas Additives on the Properties of a-Si-H Films. J. Non-Cryst. Solids 1989, 114, 193–195 DOI: 10.1016/0022-3093(89)90110-5.

18        Tsu, D.; Parsons, G.; Lucovsky, G.; Watkins, M. Optical-Emission and Mass Spectroscopic Studies of the Gas-Phase During the Deposition of Sio2 and a-Si-H by Remote Plasma-Enhanced Chemical Vapor-Deposition. J. Vac. Sci. Technol. A-Vac. Surf. Films 1989, 7 (3), 1115–1123 DOI: 10.1116/1.576239.

17        Parsons, G.; Wang, C.; Williams, M.; Lucovsky, G. Reduction of Defects by High-Temperature Annealing (150-Degrees-C-240-Degrees-C) in Hydrogenated Amorphous-Silicon Films Deposited at Room-Temperature. J. Non-Cryst. Solids 1989, 114, 178–180 DOI: 10.1016/0022-3093(89)90105-1.

16        Parsons, G.; Tsu, D.; Wang, C.; Lucovsky, G. Precursors for the Deposition of Amorphous-Silicon Hydrogen Alloys by Remote Plasma Enhanced Chemical Vapor-Deposition. J. Vac. Sci. Technol. A-Vac. Surf. Films 1989, 7 (3), 1124–1129 DOI: 10.1116/1.576240.

15        Parsons, G.; Tsu, D.; Lucovsky, G. Defects in a-Si-H Films Produced by Remote Plasma Enhanced Chemical Vapor-Deposition. J. Non-Cryst. Solids 1989, 107 (2-3), 295–300 DOI: 10.1016/0022-3093(89)90475-4.

14        Parsons, G.; Kim, S.; Lucovsky, G. Substrate Interactions in the Formation of Amorphous-Silicon Dielectric Interfaces; Madan, A., Thompson, M., Taylor, P., Hamakawa, Y., Lecomber, P., Eds.; Materials Research Soc: Pittsburgh, 1989; Vol. 149.

13        Nemanich, R.; Buehler, E.; Legrice, Y.; Shroder, R.; Parsons, G.; Wang, C.; Lucovsky, G.; Boyce, J. Raman-Scattering from Microcrystalline Si Films – Considerations of Composite Structures with Different Optical-Absorption Properties. J. Non-Cryst. Solids 1989, 114, 813–815 DOI: 10.1016/0022-3093(89)90729-1.

12        Lucovsky, G.; Parsons, G.; Wang, C.; Davidson, B.; Tsu, D. Low-Temperature Deposition of Hydrogenated Amorphous-Silicon (a-Si-H) – Control of Polyhydride Incorporation and Its Effects on Thin-Film Properties. Solar Cells 1989, 27 (1-4), 121–136 DOI: 10.1016/0379-6787(89)90022-7.

11        Lucovsky, G.; Davidson, B.; Parsons, G.; Wang, C. Incorporation of Polyhydride Bonding Groups into Thin-Films of Hydrogenated Amorphous-Silicon (a-Si-H). J. Non-Cryst. Solids 1989, 114, 154–156 DOI: 10.1016/0022-3093(89)90097-5.

10        Kim, S.; Parsons, G.; Fountain, G.; Lucovsky, G. Dependence of a-Si-H/Si3n4 Interface Properties on the Deposition Sequence in Amorphous-Silicon Thin-Film Transistor Produced by Remote Pecvd Process. J. Non-Cryst. Solids 1989, 115 (1-3), 69–71 DOI: 10.1016/0022-3093(89)90363-3.

9          Esser, A.; Seibert, K.; Kurz, H.; Parsons, G.; Wang, C.; Davidson, B.; Lucovsky, G.; Nemanich, R. Ultrafast Recombination and Trapping in Amorphous-Silicon. J. Non-Cryst. Solids 1989, 114, 573–575 DOI: 10.1016/0022-3093(89)90654-6.

8          Davidson, B.; Lucovsky, G.; Parsons, G.; Nemanich, R.; Esser, A.; Seibert, K.; Kurz, H. Free Carrier Absorption and the Transient Optical-Properties of Amorphous-Silicon Thin-Films – a Model Including Time-Dependent Free Carrier, and Static and Dispersive Interband Contributions to the Complex Dielectric-Constant. J. Non-Cryst. Solids 1989, 114, 579–581 DOI: 10.1016/0022-3093(89)90656-X.

7          Tsu, D.; Parsons, G.; Lucovsky, G. Spectroscopic Emission Studies of O2/He and N2/He Plasmas in Remote Plasma Enhanced Chemical Vapor-Deposition. J. Vac. Sci. Technol. A-Vac. Surf. Films 1988, 6 (3), 1849–1854 DOI: 10.1116/1.575267.

6          Parsons, G.; Tsu, D.; Lucovsky, G. Properties of Intrinsic and Doped a-Si-H Deposited by Remote Plasma Enhanced Chemical Vapor-Deposition. J. Vac. Sci. Technol. A-Vac. Surf. Films 1988, 6 (3), 1912–1916 DOI: 10.1116/1.575244.

5          Parsons, G.; Tsu, D.; Lucovsky, G. Optical and Electrical-Properties of a-Si-H Films Grown by Remote Plasma Enhanced Chemical Vapor-Deposition (rpecvd). J. Non-Cryst. Solids 1987, 97-8, 1375–1378 DOI: 10.1016/0022-3093(87)90329-2.

4          Parsons, G.; Kusano, C.; Lucovsky, G. Photoelectronic Properties of a-Si=h and a-Ge=h Thin-Films in Surface Cell Structures. J. Vac. Sci. Technol. A-Vac. Surf. Films 1987, 5 (4), 1655–1660 DOI: 10.1116/1.574541.

3          Cook, J.; Parsons, G.; Kusano, C.; Lucovsky, G. Bonding Defects in Amorphous-Silicon Alloys. Solar Cells 1987, 21, 387–397 DOI: 10.1016/0379-6787(87)90137-2.

2          Parsons, G.; Cook, J.; Lucovsky, G.; Lin, S.; Mantini, M. Deposition of Alpha-Si,Sn H Alloy-Films by Reactive Magnetron Sputtering from Separate Si and Sn Targets. J. Vac. Sci. Technol. A-Vac. Surf. Films 1986, 4 (3), 470–474 DOI: 10.1116/1.573910.

1          Rudder, R.; Parsons, G.; Cook, J.; Lucovsky, G. Low Defect Density a-Si,Ge-H Alloy-Films Produced by Magnetron Sputtering from Separate Si and Ge Cathodes. J. Non-Cryst. Solids 1985, 77-8, 885–888 DOI: 10.1016/0022-3093(85)90802-6.